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Content archived on 2024-04-16

INTERCOMPARISON OF SURFACE ANALYSIS MEASUREMENTS OF OXIDE FILMS OF ALUMINIUM

Objective



This project continues the theme of Project 193 by determining the reproducibility of the determination of thin oxide film thickness using AES and XPS whilst at the same time improving quantification procedures and determining important reference data for the oxide system studied.

Results

Samples of 230 nm thick Al203 on Al were produced and characterized using nuclear reaction analysis. XPS was then used to determine Al and O peak positions, intensities, chemical shifts and the oxide thickness using the spectrometer energy calibration determined in project 193. In addition the layer was sputter depth profiled using AES and the BCR 260 Ta205 oxide thickness reference material.

The very consistent results gave the following

- the binding energies of the metallic states Al 2p and Al 4f7/2 are 73.0 +/- 0.1 eV and 118.0 +/- 0.2 eV;
- the chemical shifts of Al(3+) in the oxide layer are 2.8 +/- 0.1 eV and 2.5 +/- 0.1 eV;
- using the oxide thickness obtained with nuclear reaction analysis and the ratios of the oxide thickness to electronattenuation length from XPS, the attenuation lengths forAl203 are (Al2p)MgKa = 17.7 degrees A and (Al2p)AlKa = 20.5 degrees A;
- the ratios of the photoelectron yields of oxygen toaluminium are Y(01s)/Y(Al2p) = 6.1 +/- 0.7 and Y(01s)/Y(Al2s)= 5.0 +/- O.7;
- the LMM and KLL A AES energies of Al in Al203 53.5 +/- 2.8 eVand 1389.5 +/- 3.5 eV, the corresponding values for Al metal being 66.4 +/- 2.8 eV and 1394.4 +/- 4.0 eV;
- the relative etching rate between Al203 and Ta205 is 0.69 +/- 0.17

Topic(s)

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Call for proposal

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Coordinator

Université de Paris VI (Université Pierre et Marie Curie)
EU contribution
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Address

Paris
France

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Participants (9)