Objectif Multi-junction solar cell technology, based on III-V semiconductor structures grown onto Germanium substrates, is well established as the primary photovoltaic technology used in satellite power generation. As future satellite power requirements will significantly increase due to the adoption of technologies such as electrical propulsion, sensing and telecommunications, next generation space solar cells will be required to significantly increase their conversion efficiency to enable higher energy generation with minimal increase in overall system weight and cost. To this end, this proposal will develop multi-junction space solar cells on high quality, low cost, large area (150mm diameter) Germanium substrates, which will have conversion efficiencies >33% (AM0), utilising novel 4-Junction architectures. The process will adopt dilute nitride epitaxial technology that has been developed by Nanyang Technological University (1). To enable this, a powerful consortium has been assembled, which covers the entire skill set required to produce such cells, including substrate manufacture, advanced epitaxy, device design, device fabrication, test and qualification. (1). Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell, K.H. Tan, S. Wicaksono, W.K. Loke, D. Li, S.F. Yoon, E.A. Fitzgerald, S.A. Ringel, J.S. Harris Jr, Journal of Crystal Growth 335, pp66-69, 2011. Champ scientifique engineering and technologymaterials engineeringcrystalsengineering and technologymechanical engineeringvehicle engineeringaerospace engineeringsatellite technologynatural scienceschemical sciencesinorganic chemistrymetalloidsengineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunicationsengineering and technologyenvironmental engineeringenergy and fuelsrenewable energysolar energyphotovoltaic Programme(s) FP7-SPACE - Specific Programme "Cooperation": Space Thème(s) SPA.2013.2.2-01 - Space critical technologies Appel à propositions FP7-SPACE-2013-1 Voir d’autres projets de cet appel Régime de financement CP-FP - Small or medium-scale focused research project Coordinateur IQE plc Contribution de l’UE € 658 602,00 Adresse PASCAL CLOSE ST MELLONS CF3 0EG Cardiff Royaume-Uni Voir sur la carte Région Wales East Wales Cardiff and Vale of Glamorgan Type d’activité Private for-profit entities (excluding Higher or Secondary Education Establishments) Contact administratif Iwan Davies (Dr) Liens Contacter l’organisation Opens in new window Coût total Aucune donnée Participants (3) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire UNIVERSIDAD POLITECNICA DE MADRID Espagne Contribution de l’UE € 825 841,00 Adresse CALLE RAMIRO DE MAEZTU 7 EDIFICIO RECTORADO 28040 Madrid Voir sur la carte Région Comunidad de Madrid Comunidad de Madrid Madrid Type d’activité Higher or Secondary Education Establishments Contact administratif Roberto Prieto (Prof) Liens Contacter l’organisation Opens in new window Site web Opens in new window Coût total Aucune donnée UMICORE SA Belgique Contribution de l’UE € 580 954,00 Adresse RUE DU MARAIS 31 1000 Bruxelles / Brussel Voir sur la carte Région Région de Bruxelles-Capitale/Brussels Hoofdstedelijk Gewest Région de Bruxelles-Capitale/ Brussels Hoofdstedelijk Gewest Arr. de Bruxelles-Capitale/Arr. Brussel-Hoofdstad Type d’activité Private for-profit entities (excluding Higher or Secondary Education Establishments) Contact administratif Kristof Dessein (Dr) Liens Contacter l’organisation Opens in new window Coût total Aucune donnée COMPOUND SEMICONDUCTOR TECHNOLOGIES GLOBAL LIMITED Royaume-Uni Contribution de l’UE € 432 969,00 Adresse 4 STANLEY BOULEVARD HAMILTON INTERNATIONAL TECHNOL LANTYRE G72 0BN Glasgow Voir sur la carte Région Scotland Southern Scotland South Lanarkshire Type d’activité Private for-profit entities (excluding Higher or Secondary Education Establishments) Contact administratif Wyn Meredith (Dr) Liens Contacter l’organisation Opens in new window Site web Opens in new window Coût total Aucune donnée