Exploitable results Polymer modification by ion irradiation Ion irradiation processes have been developed with polymers in 2 areas: doping of electroactive polymers to produce electronically active devices, such as pn junctions, or metal insulator semiconductor (MIS) structures; achievement of lines of high conductivity, and localized dry etching for optic applications. The latter involves the use of sources of very high ion flow rate (greater than 10{17} cm{-2} s{-1}) such as field effect ion sources (FEIS). The aim of these researches is the development of monolithic optoelectronic circuits on polymers. Computation of the electronic and optical properties of polymers and molecular materials We use quantum chemical computational techniques to calculate the electronic and optical properties of polymers and molecular materials. The electronic properties include the energies and electronic structure of the valence and conduction bands as well as bandgap energies. The calculations of the optical properties deal with the optical absorption spectra and the nonlinear second order and third order electrical polarizabilities. We apply this approach to predict the properties of organic compounds, either polymers or molecular materials, in the context of their applications in the field of information technology (displays, electrooptic couplers, frequency doubling and tripling). These calculations are used to screen large series of compounds and their results allow the synthetic efforts to be directed towards the most promising systems. Controlled doping of semiconducting polymers by ion implantation Protocols have been developed for ion implantation to give controlled p type and n type doping in thin films of solution processed semiconducting polymers. These techniques can be applied to the fabrication of thin film field effect transistors based on poly(phenylene vinylene). An assessment is being carried out of the structure and electronic structure of polymer films processed in this way. Wyszukiwanie danych OpenAIRE... Podczas wyszukiwania danych OpenAIRE wystąpił błąd Brak wyników