Objectif The rapid development of the semiconductor-based technology has enabled today’s functionalities and convenience that seemed impossible just a generation ago. Today, we rely upon numerous electronic devices that are pervasive around us to augment, accelerate, and alleviate countless tasks. In order to maintain the current (and desired) technological progression into the future, and to make this progress sustainable for the next generation, the performance of these devices must be improved in a more energy-efficient way.Complex oxides – a family of materials displaying a vast diversity of physical properties – are a promising alternative for creating the superior technologies that could ensure this extended progress. Despite their promise, the two main obstacles currently impeding their implementation are 1) continued lack of a complete understanding of the microscopic phenomena governing the properties and 2) the difficulty in integrating such materials with existing processes in the semiconductor industry.This Action exploits a novel fabrication process, inspired by the manipulation of single atomic layers such as graphene, but applied in a completely new way: to produce macroscopically large freestanding oxide thin films. Such films present a system free of substrate clamping and ideal to explore and optimize the intrinsic functionalities of these materials. In the first stage of the action, freestanding ferroelectric oxide films will be studied, thereby paving the way for implementation of the second stage in which these films will be integrated with semiconductor and flexible substrates for the development of energy conversion microelectronic devices. Once the objectives of this Action are achieved, a long awaited route to improve the current semiconductor technology via prototypical integration of complex oxides will be demonstrated. This multidisciplinary experimental action will be developed at two top level research institutions in United States and Spain. Champ scientifique engineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgrapheneengineering and technologymaterials engineeringcoating and filmsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivityengineering and technologyenvironmental engineeringenergy and fuelsenergy conversion Programme(s) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Thème(s) MSCA-IF-2017 - Individual Fellowships Appel à propositions H2020-MSCA-IF-2017 Voir d’autres projets de cet appel Régime de financement MSCA-IF-GF - Global Fellowships Coordinateur FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA Contribution nette de l'UE € 257 191,20 Adresse CAMPUS DE LA UAB EDIFICI Q ICN2 08193 Cerdanyola Del Valles Espagne Voir sur la carte Région Este Cataluña Barcelona Type d’activité Research Organisations Liens Contacter l’organisation Opens in new window Site web Opens in new window Participation aux programmes de R&I de l'UE Opens in new window Réseau de collaboration HORIZON Opens in new window Coût total € 257 191,20 Partenaires (1) Trier par ordre alphabétique Trier par contribution nette de l'UE Tout développer Tout réduire Partenaire Les organisations partenaires contribuent à la mise en œuvre de l’action, mais ne signent pas la convention de subvention. THE REGENTS OF THE UNIVERSITY OF CALIFORNIA États-Unis Contribution nette de l'UE € 0,00 Adresse FRANKLIN STREET 1111 12 FLOOR 94607 OAKLAND CA Voir sur la carte Type d’activité Higher or Secondary Education Establishments Liens Contacter l’organisation Opens in new window Site web Opens in new window Participation aux programmes de R&I de l'UE Opens in new window Réseau de collaboration HORIZON Opens in new window Coût total € 172 130,40
