Objetivo The rapid development of the semiconductor-based technology has enabled today’s functionalities and convenience that seemed impossible just a generation ago. Today, we rely upon numerous electronic devices that are pervasive around us to augment, accelerate, and alleviate countless tasks. In order to maintain the current (and desired) technological progression into the future, and to make this progress sustainable for the next generation, the performance of these devices must be improved in a more energy-efficient way.Complex oxides – a family of materials displaying a vast diversity of physical properties – are a promising alternative for creating the superior technologies that could ensure this extended progress. Despite their promise, the two main obstacles currently impeding their implementation are 1) continued lack of a complete understanding of the microscopic phenomena governing the properties and 2) the difficulty in integrating such materials with existing processes in the semiconductor industry.This Action exploits a novel fabrication process, inspired by the manipulation of single atomic layers such as graphene, but applied in a completely new way: to produce macroscopically large freestanding oxide thin films. Such films present a system free of substrate clamping and ideal to explore and optimize the intrinsic functionalities of these materials. In the first stage of the action, freestanding ferroelectric oxide films will be studied, thereby paving the way for implementation of the second stage in which these films will be integrated with semiconductor and flexible substrates for the development of energy conversion microelectronic devices. Once the objectives of this Action are achieved, a long awaited route to improve the current semiconductor technology via prototypical integration of complex oxides will be demonstrated. This multidisciplinary experimental action will be developed at two top level research institutions in United States and Spain. Ámbito científico engineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgrapheneengineering and technologymaterials engineeringcoating and filmsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivityengineering and technologyenvironmental engineeringenergy and fuelsenergy conversion Programa(s) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Tema(s) MSCA-IF-2017 - Individual Fellowships Convocatoria de propuestas H2020-MSCA-IF-2017 Consulte otros proyectos de esta convocatoria Régimen de financiación MSCA-IF-GF - Global Fellowships Coordinador FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA Aportación neta de la UEn € 257 191,20 Dirección CAMPUS DE LA UAB EDIFICI Q ICN2 08193 Cerdanyola Del Valles España Ver en el mapa Región Este Cataluña Barcelona Tipo de actividad Research Organisations Enlaces Contactar con la organización Opens in new window Sitio web Opens in new window Participación en los programas de I+D de la UE Opens in new window Red de colaboración de HORIZON Opens in new window Coste total € 257 191,20 Socios (1) Ordenar alfabéticamente Ordenar por aportación neta de la UE Ampliar todo Contraer todo Socio Las organizaciones asociadas contribuyen a la aplicación de la acción, pero no firman el acuerdo de subvención. THE REGENTS OF THE UNIVERSITY OF CALIFORNIA Estados Unidos Aportación neta de la UEn € 0,00 Dirección FRANKLIN STREET 1111 12 FLOOR 94607 OAKLAND CA Ver en el mapa Tipo de actividad Higher or Secondary Education Establishments Enlaces Contactar con la organización Opens in new window Sitio web Opens in new window Participación en los programas de I+D de la UE Opens in new window Red de colaboración de HORIZON Opens in new window Coste total € 172 130,40