Graphene Flagship 2D Experimental Pilot Line

Informations projet

2D-EPL

N° de convention de subvention: 952792

DOI

10.3030/952792

Projet clôturé

Date de signature de la CE 28 Octobre 2020

Date de début 1 Octobre 2020

Date de fin 30 Septembre 2024

Financé au titre de

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Coût total

€ 20 000 000,00

Contribution de l’UE

€ 20 000 000,00

Coordonné par

CHALMERS TEKNISKA HOGSKOLA AB
Sweden

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Documents, reports (10)

Fact sheet for the MPW runs

The deliverable will summarise the key parameters, boundary conditions and material stack for the planned MPW runs. It will form the basis for informing the customers on the MPW runs and for setting up the official fact sheet.

Report on received requests year 3

Report on customer requests (sector, reasons for rejections, customer type [GF, GF AMs, other European, other non-European], costs), including feedback from serviced customers and rejected customers. A confidential annex will include detailed information about customers.

Evaluation and adaptation of access policy and procedures

Report on the evaluation of the access policy to the pilot line. Based on customer feedback and internal user friendliness the access procedure will be adapted and rolled out.

Report on received requests year 1

Report on customer requests (sector, reasons for rejections, customer type [GF, GF AMs, other European, other non-European], costs), including feedback from serviced customers and rejected customers. A confidential annex will include detailed information about customers.

Report on the cleaning of the polymer residues on transferred

Report on the polymer clean on top of graphene by GSEMI.

Compare wafer scale single crystalline to polycrystalline

The 2D-EPL will test the wafer-scale transferred crystalline graphene and compare its performance to large area film of transferred polycrystalline graphene. The device performance, design flexibility, reliability, scalability and total cost of ownership will be independently evaluated and assessed by a sub-contractor of the 2D-EPL as well as the 2D-EPL Industrial Advisory Board. Once this approach results in a better device performance than polycrystalline graphene on a given wafer size (200 or 300 mm), its inclusion in the 2D-EPL will be pursued, provided that it is competitive in comparison to polycrystalline graphene in terms of design flexibility, reliability and scalable at commercially justifiable costs, considering total cost of ownership.

Final report on graphene transfer

Final report on graphene transfer.

Protocol for characterisation

Protocol for chemical, electrical and structural characterization regarding residual doping, mobility, hysteresis, stability and contact resistance, to allow comparative numerical characterization and optimization of the transfer, cleaning, dielectrics and contacting methods developed in tasks 3.1 - 3.4 by all the partners

Report on received requests year 2

Report on customer requests (sector, reasons for rejections, customer type [GF, GF AMs, other European, other non-European], costs), including feedback from serviced customers and rejected customers. A confidential annex will include detailed information about customers.

Dissemination and communication plan

CUT will prepare a dissemination and communication plan for the 2D-EPL.

Websites, patent fillings, videos etc. (4)

Transfer to EUROPRACTICE including the development of a toolkit to secure a smooth follow up

Plan to transfer the 2D pilot line management to EUROPRACTICE based on the internal learning in the initial phase of the 2D pilot line and adopting the best practices from EUROPRACTICE.

Transparent cost structure

Establishment of a transparent cost structure based on the processing results and yields achieved in WP1, WP2 and WP3 in order to be able to evaluate the costs of the MPW runs. This will also address prospects, financial viability and integration of the 2D-EPL with EUROPRACTICE.

Set-up of an Industrial advisory board

First meeting of the Industrial Advisory board. Roles, tasks and procedure agreed and validated by IAB.

Single entry-point web portal

Develop an embedded section on the graphene-flaghsip.eu fully dedicated to the 2D-EPL. The sub-page shall be visible from the landing page and have a primary positioning to reach the industry sector.

Publications

Peer reviewed articles (37)

Plasma enhanced atomic layer etching of high-k layers on WS2

Auteurs: J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, and S. De Gendt
Publié dans: Journal of Vacuum Science & Technology, Numéro 15208559, 2022, ISSN 1520-8559
Éditeur: AIP Publishing LLC
DOI: 10.1116/6.0001726

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Auteurs: R. Lukose, M. Lisker, F. Akhtar, M. Fraschke, T. Grabolla, A. Mai, M. Lukosius
Publié dans: Scientific Reports, Numéro 11/1, 2021, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/s41598-021-92432-4

Reliable metal–graphene contact formation process flows in a CMOS-compatible environment

Auteurs: M. Elviretti, M. Lisker, R. Lukose, M. Lukosius, F. Akhtara, A. Maiab
Publié dans: Nanoscale Advances, Numéro 4/20, 2022, Page(s) 4373–4380, ISSN 2516-0230
Éditeur: The Royal Society of Chemistry
DOI: 10.1039/d2na00351a

Assessment of Wafer‐Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements

Auteurs: Sebastian Wittmann, Stephan Pindl, Simon Sawallich, Michael Nagel, Alexander Michalski, Himadri Pandey, Ardeshir Esteki, Satender Kataria, Max C. Lemme
Publié dans: Advanced Materials Technologies, Numéro 8, 2023, ISSN 2365-709X
Éditeur: Wiley
DOI: 10.1002/admt.202201587

Chemical Vapor Deposition of a Single-Crystalline MoS₂ Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Auteurs: Iryna Kandybka, Benjamin Groven, Henry Medina Silva, Stefanie Sergeant, Ankit Nalin Mehta, Serkan Koylan, Yuanyuan Shi, Sreetama Banerjee, Pierre Morin, Annelies Delabie
Publié dans: ACS Nano, Numéro 18, 2024, Page(s) 3173-3186, ISSN 1936-0851
Éditeur: American Chemical Society
DOI: 10.1021/acsnano.3c09364

Graphene-Based Microwave Circuits: A Review

Auteurs: Mohamed Saeed,Paula Palacios,Muh-Dey Wei,Eyyub Baskent,Chun-Yu Fan,Burkay Uzlu,Kun-Ta Wang,Andreas Hemmetter,Zhenxing Wang,Daniel Neumaier,Max C. Lemme,Renato Negra
Publié dans: Advanced Materials, Numéro 15214095, 2021, ISSN 1521-4095
Éditeur: Wiley
DOI: 10.1002/adma.202108473

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

Auteurs: Eros Reato,Paula Palacios,Burkay Uzlu,Mohamed Saeed,Annika Grundmann,Zhenyu Wang,Daniel S. Schneider,Zhenxing Wang,Michael Heuken,Holger Kalisch,Andrei Vescan,Alexandra Radenovic,Andras Kis,Daniel Neumaier,Renato Negra,Max C. Lemme
Publié dans: Advanced Materials, Numéro 15214095, 2022, ISSN 1521-4095
Éditeur: Wiley
DOI: 10.1002/adma.202108469

Plasma‐Enhanced Atomic Layer Deposition of Al 2 O 3 on Graphene Using Monolayer hBN as Interfacial Layer

Auteurs: Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier
Publié dans: Advanced Materials Technologies, Numéro 6/11, 2021, Page(s) 2100489, ISSN 2365-709X
Éditeur: Wiley
DOI: 10.1002/admt.202100489

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Auteurs: Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser
Publié dans: Nature Electronics, Numéro 5, 2024, Page(s) 356-366, ISSN 2520-1131
Éditeur: Nature Portfolio
DOI: 10.1038/s41928-022-00768-0

Graphene-Based Wireless Agile Interconnects for Massive Heterogeneous Multi-Chip Processors

Auteurs: Sergi Abadal, Robert Guirado, Hamidreza Taghvaee, Akshay Jain, Elana Pereira de Santana, Peter Haring Bolívar, Mohamed Saeed, Renato Negra, Zhenxing Wang, Kun-Ta Wang, Max C. Lemme, Joshua Klein, Marina Zapater, Alexandre Levisse, David Atienza, Davide Rossi, Francesco Conti, Martino Dazzi, Geethan Karunaratne, Irem Boybat, Abu Sebastian
Publié dans: IEEE Wireless Communications, Numéro 30, 2023, Page(s) 162-169, ISSN 1536-1284
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mwc.010.2100561

Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Auteurs: Zaoyang Lin, Xiangyu Wu, Daire Cott, Yuanyuan Shi, Henry Medina Silva, Stefanie Sergeant, Thierry Conard, Johan Meersschaut, Ankit Nalin Mehta, Benjamin Groven, Pierre Morin, Inge Asselberghs, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Dennis Lin, Annelies Delabie
Publié dans: ACS Applied Electronic Materials, Numéro 6, 2024, Page(s) 4213-4222, ISSN 2637-6113
Éditeur: American Chemical Society
DOI: 10.1021/acsaelm.4c00309

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Auteurs: Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme
Publié dans: Advanced Electronic Materials, Numéro 7/7, 2021, Page(s) 2001210, ISSN 2199-160X
Éditeur: Wiley
DOI: 10.1002/aelm.202001210

Roadmap on low-power electronics

Auteurs: Ramamoorthy Ramesh, Sayeef Salahuddin, Suman Datta, Carlos H. Diaz, Dmitri E. Nikonov, Ian A. Young, Donhee Ham, Meng-Fan Chang, Win-San Khwa, Ashwin Sanjay Lele, Christian Binek, Yen-Lin Huang, Yuan-Chen Sun, Ying-Hao Chu, Bhagwati Prasad, Michael Hoffmann, Jia-Mian Hu, Zhi (Jackie) Yao, Laurent Bellaiche, Peng Wu, Jun Cai, Joerg Appenzeller, Supriyo Datta, Kerem Y. Camsari, Jaesuk Kwon, Jean Ann
Publié dans: APL Materials, Numéro 12, 2024, ISSN 2166-532X
Éditeur: AIP Publishing
DOI: 10.1063/5.0184774

Process-Induced Modulation of Domain Orientations during WS₂ Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire

Auteurs: Joris Verdin, Henry Medina Silva, Ankit Nalin Mehta, Iryna Kandybka, Benjamin Groven, Pawan Kumar, Serkan Koylan, Stefanie Sergeant, Paola Favia, Pierre Morin, Annelies Delabie
Publié dans: ACS Applied Electronic Materials, Numéro 6, 2024, Page(s) 6758-6769, ISSN 2637-6113
Éditeur: American Chemical Society
DOI: 10.1021/acsaelm.4c01182

Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

Auteurs: Agata Piacentini,Damiano Marian,Daniel S. Schneider,Enrique González Marín,Zhenyu Wang,Martin Otto,Bárbara Canto,Aleksandra Radenovic,Andras Kis,Gianluca Fiori,Max C. Lemme,Daniel Neumaier
Publié dans: Advanced Electronic Materials, 2022, ISSN 2199-160X
Éditeur: Wiley
DOI: 10.1002/aelm.202200123

AFM-Based Hamaker Constant Determination with Blind Tip Reconstruction

Auteurs: Benny Ku,Ferdinandus van de Wetering,Jens Bolten,Bart Stel,Mark A. van de Kerkhof,Max C. Lemme
Publié dans: Advanced Materials Technologies, Numéro 2365709X, 2022, ISSN 2365-709X
Éditeur: Wiley
DOI: 10.1002/admt.202200411

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

Auteurs: Fatima Akhtar, Jaroslaw Dabrowski, Rasuole Lukose, Christian Wenger, Mindaugas Lukosius
Publié dans: ACS Applied Materials & Interfaces, Numéro 15, 2023, Page(s) 36966-36974, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.3c05860

Wafer-scale characterization for two-dimensional material layers

Auteurs: A. Moussa, J. Bogdanowicz, B. Groven, P. Morin, M. Beggiato, M. Saib, G. Santoro, Y. Abramovitz, K. Houchens, S. Ben Nissim, N. Meir, J. Hung, A. Urbanowicz, R. Koret, I. Turovets, B. Lee, W.T. Lee, G. F. Lorusso, A.-L. Charley
Publié dans: Japanese Journal of Applied Physics, Numéro 63, 2024, Page(s) 030802, ISSN 1347-4065
Éditeur: IOP Publishing
DOI: 10.35848/1347-4065/ad26bc

Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

Auteurs: Vladislav Voronenkov, Benjamin Groven, Henry Medina Silva, Pierre Morin, Stefan De Gendt
Publié dans: physica status solidi (a), Numéro 221, 2024, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202300943

Variability and High Temperature Reliability ofGraphene Field-Effect Transistors with ThinEpitaxial CaF2 Insulators

Auteurs: Yury Illarionov, Theresia Knobloch, Burkay Uzlu, Alexander Banshchikov, Illiya Ivanov, Viktor Sverdlov, Mikhail Vexler, Michael Waltl, Zhenxing Wang, Bibhas Manna, Daniel Neumaier, Max C. Lemme, Nikolai Sokolov, Tibor Grasser, Martin Otto, Stefanie Linda Stoll
Publié dans: NPJ 2D MATERIALS AND APPLICATIONS, 2024, ISSN 2397-7132
Éditeur: Nature Portfolio
DOI: 10.21203/rs.3.rs-3936684/v1

Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs

Auteurs: Luca Panarella, Stanislav Tyaginov, Ben Kaczer, Quentin Smets, Devin Verreck, Alexander Makarov, Tom Schram, Dennis Lin, César Javier Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Publié dans: ACS Applied Materials & Interfaces, Numéro 16, 2024, Page(s) 62314-62325, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.4c10888

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Auteurs: Arne Quellmalz, Xiaojing Wang, Simon Sawallich, Burkay Uzlu, Martin Otto, Stefan Wagner, Zhenxing Wang, Maximilian Prechtl, Oliver Hartwig, Siwei Luo, Georg S. Duesberg, Max C. Lemme, Kristinn B. Gylfason, Niclas Roxhed, Göran Stemme, Frank Niklaus
Publié dans: Nature Communications, Numéro 12/1, 2021, ISSN 2041-1723
Éditeur: Nature Publishing Group
DOI: 10.1038/s41467-021-21136-0

Wafer-Scale Graphene Field-Effect Transistor Biosensor Arrays with Monolithic CMOS Readout

Auteurs: Miika Soikkeli, Anton Murros, Arto Rantala, Oihana Txoperena, Olli-Pekka Kilpi, Markku Kainlauri, Kuura Sovanto, Arantxa Maestre, Alba Centeno, Kari Tukkiniemi, David Gomes Martins, Amaia Zurutuza, Sanna Arpiainen, Mika Prunnila
Publié dans: ACS Applied Electronic Materials, Numéro 5, 2023, Page(s) 4925-4932, ISSN 2637-6113
Éditeur: American Chemical Society
DOI: 10.1021/acsaelm.3c00706

Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

Auteurs: Haonan Tang, Sergej Pasko, Simonas Krotkus, Thorsten Anders, Cornelia Wockel, Jan Mischke, Xiaochen Wang, Ben Conran, Clifford McAleese, Ken Teo, Sreetama Banerjee, Henry Medina Silva, Pierre Morin, Inge Asselberghs, Amir Ghiami, Annika Grundmann, Songyao Tang, Hleb Fiadziushkin, Holger Kalisch, Andrei Vescan, Salim El Kazzi, Alain Marty, Djordje Dosenovic, Hanako Okuno, Lucie Le Van-Jodin, Michae
Publié dans: Journal of Crystal Growth, Numéro 608, 2023, Page(s) 127111, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2023.127111

2D materials for future heterogeneous electronics

Auteurs: Max C. Lemme, Deji Akinwande, Cedric Huyghebaert & Christoph Stampfer
Publié dans: Nature Communications, Numéro 20411723, 2022, ISSN 2041-1723
Éditeur: Nature Publishing Group
DOI: 10.1038/s41467-022-29001-4

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

Auteurs: Wenwen Fei, Jens Trommer, Max Christian Lemme, Thomas Mikolajick, André Heinzig
Publié dans: InfoMat, Numéro 4, 2024, ISSN 2567-3165
Éditeur: Wiley
DOI: 10.1002/inf2.12355

"Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS<mml:math xmlns:mml=""http://www.w3.org/1998/Math/MathML"" altimg=""si12.svg"" display=""inline"" id=""d1e247""><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> monolayers on sapphire substrates"

Auteurs: Y. Rybalchenko, A. Minj, H. Medina, R. Villarreal, B. Groven, D. Lin, L.M.C. Pereira, P. Morin, T. Hantschel, V.V. Afanas’ev
Publié dans: Solid-State Electronics, Numéro 209, 2024, Page(s) 108781, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108781

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Auteurs: Zaoyang Lin, Sven Dekelver, Daire Cott, Benjamin Groven, Stefanie Sergeant, Thierry Conard, Xiangyu Wu, Pierre Morin, Dennis Lin, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Annelies Delabie
Publié dans: Journal of Vacuum Science &amp; Technology A, Numéro 42, 2024, ISSN 0734-2101
Éditeur: American Institute of Physics
DOI: 10.1116/6.0003894

Graphene Thermal Infrared Emitters Integrated into Silicon Photonic Waveguides

Auteurs: Nour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin, Po-Han Huang, Stephan Suckow, Stephan Schroeder, Eleonora De Luca, Floria Ottonello Briano, Arne Quellmalz, Georg S. Duesberg, Frank Niklaus, Kristinn B. Gylfason, Max C. Lemme
Publié dans: ACS Photonics, Numéro 11, 2024, Page(s) 2961-2969, ISSN 2330-4022
Éditeur: American Chemical Society
DOI: 10.1021/acsphotonics.3c01892

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

Auteurs: Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Publié dans: npj 2D Materials and Applications, Numéro 8, 2024, ISSN 2397-7132
Éditeur: Nature Portfolio
DOI: 10.1038/s41699-024-00482-9

How to report and benchmark emerging field-effect transistors

Auteurs: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin & Curt A. Richter
Publié dans: Nature Electronics, Numéro 25201131, 2022, ISSN 2520-1131
Éditeur: Nature Publishing Group
DOI: 10.1038/s41928-022-00798-8

Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

Auteurs: Tom Schram, Surajit Sutar, Iuliana Radu, Inge Asselberghs
Publié dans: Advanced Materials, Numéro 34, 2023, ISSN 0935-9648
Éditeur: United Nations Industrial Developement Organization
DOI: 10.1002/adma.202109796

2D TMDC aging: a case study of monolayer WS₂ and mitigation strategies

Auteurs: P-J Wyndaele, J-F de Marneffe, R Slaets, B Groven, A Franquet, P Brüner, T Grehl, S De Gendt
Publié dans: Nanotechnology, Numéro 35, 2024, Page(s) 475702, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ad72fb

Roadmap on energy harvesting materials

Auteurs: Vincenzo Pecunia, S Ravi P Silva, Jamie D Phillips, Elisa Artegiani, Alessandro Romeo, Hongjae Shim, Jongsung Park, Jin Hyeok Kim, Jae Sung Yun, Gregory C Welch, Bryon W Larson, Myles Creran, Audrey Laventure, Kezia Sasitharan, Natalie Flores-Diaz, Marina Freitag, Jie Xu, Thomas M Brown, Benxuan Li, Yiwen Wang, Zhe Li, Bo Hou, Behrang H Hamadani, Emmanuel Defay, Veronika Kovacova, Sebastjan Glinse
Publié dans: Journal of Physics: Materials, Numéro 6, 2023, Page(s) 042501, ISSN 2515-7639
Éditeur: IOP Publishing
DOI: 10.1088/2515-7639/acc550

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Auteurs: Yu. Yu. Illarionov, A. Karl, Q. Smets, B. Kaczer, T. Knobloch, L. Panarella, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser
Publié dans: npj 2D Materials and Applications, Numéro 8, 2024, ISSN 2397-7132
Éditeur: Nature Portfolio
DOI: 10.1038/s41699-024-00445-0

Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators

Auteurs: Chenghan Wu, Tom Reep, Steven Brems, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Cedric Huyghebaert, Marianna Pantouvaki, Zheng Wang, Dries Van Thourhout
Publié dans: IEEE Journal of Selected Topics in Quantum Electronics, Numéro 30, 2024, Page(s) 1-11, ISSN 1077-260X
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jstqe.2024.3411058

Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

Auteurs: P.-J. Wyndaele, J.-F. de Marneffe, S. Sergeant, C. J. L. de la Rosa, S. Brems, A. M. Caro, S. De Gendt
Publié dans: npj 2D Materials and Applications, Numéro 8, 2024, ISSN 2397-7132
Éditeur: Nature Portfolio
DOI: 10.1038/s41699-024-00464-x

Conference proceedings (9)

High yield and process uniformity for 300 mm integrated WS2 FETs

Auteurs: T.Schram, Q.Smets, D.Radisic, B.Groven, A.Thiam, W.Li, E.Dupuy,K.Vandersmissen, T.Maurice, I.Asselberghs & I.Radu
Publié dans: 2021 Symposium on VLSI Technology, 2021
Éditeur: IEEE

Overview of scalable transfer approaches to enable epitaxial 2D material integration

Auteurs: Steven Brems, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, Francois Chancerel, Clement Merckling, Pieter-Jan Wyndaele, Jean-Francois De Marneffe, Tom Schram, Pawan Kumar, Stefanie Sergeant, Thomas Nuytten, Stefan De Gendt, Henry Medina Silva, Benjamin Groven, Pierre Morin, Gouri Sankar Kar, César Lockhart De la Rosa, Didit Yudistira, Joris Va
Publié dans: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2024, Page(s) 1-2
Éditeur: IEEE
DOI: 10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381

Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Auteurs: Quentin Smets; Tom Schram; Devin Verreck; Daire Cott; Benjamin Groven; Zubair Ahmed; Ben Kaczer; Jerome Mitard; Xiangyu Wu; Souvik Kundu; Hans Mertens; Dunja Radisic; Arame Thiam; Waikin Li; Emmanuel Dupuy; Zheng Tao; Kevin Vandersmissen; Thibaut Maurice; Dennis Lin; Pierre Morin; Inge Asselberghs; Iuliana Radu
Publié dans: 2021 IEEE International Electron Devices Meeting, 2021
Éditeur: IEEE
DOI: 10.1109/iedm19574.2021.9720517

Advanced characterization of 2D materials using SEM image processing and machine learning

Auteurs: Mohamed Saib, Alain Moussa, Matteo Beggiato, Benjamin Groven, Henry Medina Silva, Pierre Morin, Janusz Bogdanowicz, Gouri Sankar Kar, Anne-Laure Charley
Publié dans: Metrology, Inspection, and Process Control XXXVIII, 2024, Page(s) 31
Éditeur: SPIE
DOI: 10.1117/12.3014378

Wafer scale integration of MX2 based NMOS only ring oscillators on 300 mm wafers

Auteurs: Tom Schram; Hikmet. Celiker; Quentin Smets; Inge Asselbergs; G. S. Kar, Kris Myny
Publié dans: 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2022
Éditeur: IEEE
DOI: 10.1109/snw56633.2022.9889048

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer

Auteurs: S. Ghosh, Q. Smets, S. Banerjee, T. Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, B. Groven, H. M. Silva, S. Kundu, D. Cott, D. Lin, P. Favia, T. Nuytten, A. Phommahaxay, I. Asselberghs, C. De La Rosa, G. S. Kar, S. Brems
Publié dans: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, Page(s) 1-2
Éditeur: IEEE
DOI: 10.23919/vlsitechnologyandcir57934.2023.10185215

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

Auteurs: Yuanyuan Shi; Benjamin Groven; Quentin Smets; Surajit Sutar; Sreetama Banerjee; Henry Medina; Xiangyu Wu; Cedric Huyghebaert; Steven Brems; Dennis Lin; Pierre Morin; Matty Caymax; Inge Asselberghs; Iuliana Radu
Publié dans: 2021 IEEE International Electron Devices Meeting, 2021
Éditeur: IEEE
DOI: 10.1109/iedm19574.2021.9720676

EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration

Auteurs: S. Ghosh, A. Kruv, Q. Smets, T. Schram, D. J. Leech, T. Ding, V. Turkani, B. Groven, A. Dangel, G. Probst, T. Uhrmann, M. Wimplinger, I. Asselberghs, C. J. Lockhart de la Rosa, S. Brems, G. S. Kar
Publié dans: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, Page(s) 1-2
Éditeur: IEEE
DOI: 10.1109/vlsitechnologyandcir46783.2024.10631364

Towards low damage and fab-compatible top-contacts in MX₂ transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

Auteurs: S. Kundu, D. H. van Dorp, T. Schram, Q. Smets, S. Banerjee, B. Groven, D. Cott, S. Decoster, P. Bezard, F. Lazzarino, K. Banerjee, S. Ghosh, J. F. de Marneffe, P. Morin, C. J. L. de La Rosa, I. Asselberghs, G. S. Kar
Publié dans: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, Page(s) 1-2
Éditeur: IEEE
DOI: 10.23919/vlsitechnologyandcir57934.2023.10185413

Droits de propriété intellectuelle

Patent (1)

Methods of depositing materials onto 2-dimensional layered materials

Numéro de demande/publication: 20 2118203
Date: 2021-12-15
Demandeur(s): OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED