Graphene Flagship 2D Experimental Pilot Line

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Deliverables

Fact sheet for the MPW runs

The deliverable will summarise the key parameters, boundary conditions and material stack for the planned MPW runs. It will form the basis for informing the customers on the MPW runs and for setting up the official fact sheet.

Report on received requests year 3

Report on customer requests (sector, reasons for rejections, customer type [GF, GF AMs, other European, other non-European], costs), including feedback from serviced customers and rejected customers. A confidential annex will include detailed information about customers.

Evaluation and adaptation of access policy and procedures

Report on the evaluation of the access policy to the pilot line. Based on customer feedback and internal user friendliness the access procedure will be adapted and rolled out.

Report on received requests year 1

Report on the cleaning of the polymer residues on transferred

Report on the polymer clean on top of graphene by GSEMI.

Compare wafer scale single crystalline to polycrystalline

The 2D-EPL will test the wafer-scale transferred crystalline graphene and compare its performance to large area film of transferred polycrystalline graphene. The device performance, design flexibility, reliability, scalability and total cost of ownership will be independently evaluated and assessed by a sub-contractor of the 2D-EPL as well as the 2D-EPL Industrial Advisory Board. Once this approach results in a better device performance than polycrystalline graphene on a given wafer size (200 or 300 mm), its inclusion in the 2D-EPL will be pursued, provided that it is competitive in comparison to polycrystalline graphene in terms of design flexibility, reliability and scalable at commercially justifiable costs, considering total cost of ownership.

Final report on graphene transfer

Final report on graphene transfer.

Protocol for characterisation

Protocol for chemical, electrical and structural characterization regarding residual doping, mobility, hysteresis, stability and contact resistance, to allow comparative numerical characterization and optimization of the transfer, cleaning, dielectrics and contacting methods developed in tasks 3.1 - 3.4 by all the partners

Report on received requests year 2

Dissemination and communication plan

CUT will prepare a dissemination and communication plan for the 2D-EPL.

Transfer to EUROPRACTICE including the development of a toolkit to secure a smooth follow up

Plan to transfer the 2D pilot line management to EUROPRACTICE based on the internal learning in the initial phase of the 2D pilot line and adopting the best practices from EUROPRACTICE.

Transparent cost structure

Establishment of a transparent cost structure based on the processing results and yields achieved in WP1, WP2 and WP3 in order to be able to evaluate the costs of the MPW runs. This will also address prospects, financial viability and integration of the 2D-EPL with EUROPRACTICE.

Set-up of an Industrial advisory board

First meeting of the Industrial Advisory board. Roles, tasks and procedure agreed and validated by IAB.

Single entry-point web portal

Develop an embedded section on the graphene-flaghsip.eu fully dedicated to the 2D-EPL. The sub-page shall be visible from the landing page and have a primary positioning to reach the industry sector.

Publications

Plasma enhanced atomic layer etching of high-k layers on WS2

Author(s): J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, and S. De Gendt
Published in: Journal of Vacuum Science & Technology, Issue 15208559, 2022, ISSN 1520-8559
Publisher: AIP Publishing LLC
DOI: 10.1116/6.0001726

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Author(s): R. Lukose, M. Lisker, F. Akhtar, M. Fraschke, T. Grabolla, A. Mai, M. Lukosius
Published in: Scientific Reports, Issue 11/1, 2021, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-021-92432-4

Reliable metal–graphene contact formation process flows in a CMOS-compatible environment

Author(s): M. Elviretti, M. Lisker, R. Lukose, M. Lukosius, F. Akhtara, A. Maiab
Published in: Nanoscale Advances, Issue 4/20, 2022, Page(s) 4373–4380, ISSN 2516-0230
Publisher: The Royal Society of Chemistry
DOI: 10.1039/d2na00351a

Assessment of Wafer‐Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements

Author(s): Sebastian Wittmann, Stephan Pindl, Simon Sawallich, Michael Nagel, Alexander Michalski, Himadri Pandey, Ardeshir Esteki, Satender Kataria, Max C. Lemme
Published in: Advanced Materials Technologies, Issue 8, 2023, ISSN 2365-709X
Publisher: Wiley
DOI: 10.1002/admt.202201587

Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Author(s): Iryna Kandybka, Benjamin Groven, Henry Medina Silva, Stefanie Sergeant, Ankit Nalin Mehta, Serkan Koylan, Yuanyuan Shi, Sreetama Banerjee, Pierre Morin, Annelies Delabie
Published in: ACS Nano, Issue 18, 2024, Page(s) 3173-3186, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.3c09364

Graphene-Based Microwave Circuits: A Review

Author(s): Mohamed Saeed,Paula Palacios,Muh-Dey Wei,Eyyub Baskent,Chun-Yu Fan,Burkay Uzlu,Kun-Ta Wang,Andreas Hemmetter,Zhenxing Wang,Daniel Neumaier,Max C. Lemme,Renato Negra
Published in: Advanced Materials, Issue 15214095, 2021, ISSN 1521-4095
Publisher: Wiley
DOI: 10.1002/adma.202108473

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

Author(s): Eros Reato,Paula Palacios,Burkay Uzlu,Mohamed Saeed,Annika Grundmann,Zhenyu Wang,Daniel S. Schneider,Zhenxing Wang,Michael Heuken,Holger Kalisch,Andrei Vescan,Alexandra Radenovic,Andras Kis,Daniel Neumaier,Renato Negra,Max C. Lemme
Published in: Advanced Materials, Issue 15214095, 2022, ISSN 1521-4095
Publisher: Wiley
DOI: 10.1002/adma.202108469

Plasma‐Enhanced Atomic Layer Deposition of Al 2 O 3 on Graphene Using Monolayer hBN as Interfacial Layer

Author(s): Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier
Published in: Advanced Materials Technologies, Issue 6/11, 2021, Page(s) 2100489, ISSN 2365-709X
Publisher: Wiley
DOI: 10.1002/admt.202100489

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Author(s): Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser
Published in: Nature Electronics, Issue 5, 2024, Page(s) 356-366, ISSN 2520-1131
Publisher: Nature Portfolio
DOI: 10.1038/s41928-022-00768-0

Graphene-Based Wireless Agile Interconnects for Massive Heterogeneous Multi-Chip Processors

Author(s): Sergi Abadal, Robert Guirado, Hamidreza Taghvaee, Akshay Jain, Elana Pereira de Santana, Peter Haring Bolívar, Mohamed Saeed, Renato Negra, Zhenxing Wang, Kun-Ta Wang, Max C. Lemme, Joshua Klein, Marina Zapater, Alexandre Levisse, David Atienza, Davide Rossi, Francesco Conti, Martino Dazzi, Geethan Karunaratne, Irem Boybat, Abu Sebastian
Published in: IEEE Wireless Communications, Issue 30, 2023, Page(s) 162-169, ISSN 1536-1284
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mwc.010.2100561

Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Author(s): Zaoyang Lin, Xiangyu Wu, Daire Cott, Yuanyuan Shi, Henry Medina Silva, Stefanie Sergeant, Thierry Conard, Johan Meersschaut, Ankit Nalin Mehta, Benjamin Groven, Pierre Morin, Inge Asselberghs, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Dennis Lin, Annelies Delabie
Published in: ACS Applied Electronic Materials, Issue 6, 2024, Page(s) 4213-4222, ISSN 2637-6113
Publisher: American Chemical Society
DOI: 10.1021/acsaelm.4c00309

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Author(s): Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme
Published in: Advanced Electronic Materials, Issue 7/7, 2021, Page(s) 2001210, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.202001210

Roadmap on low-power electronics

Author(s): Ramamoorthy Ramesh, Sayeef Salahuddin, Suman Datta, Carlos H. Diaz, Dmitri E. Nikonov, Ian A. Young, Donhee Ham, Meng-Fan Chang, Win-San Khwa, Ashwin Sanjay Lele, Christian Binek, Yen-Lin Huang, Yuan-Chen Sun, Ying-Hao Chu, Bhagwati Prasad, Michael Hoffmann, Jia-Mian Hu, Zhi (Jackie) Yao, Laurent Bellaiche, Peng Wu, Jun Cai, Joerg Appenzeller, Supriyo Datta, Kerem Y. Camsari, Jaesuk Kwon, Jean Ann
Published in: APL Materials, Issue 12, 2024, ISSN 2166-532X
Publisher: AIP Publishing
DOI: 10.1063/5.0184774

Process-Induced Modulation of Domain Orientations during WS2 Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire

Author(s): Joris Verdin, Henry Medina Silva, Ankit Nalin Mehta, Iryna Kandybka, Benjamin Groven, Pawan Kumar, Serkan Koylan, Stefanie Sergeant, Paola Favia, Pierre Morin, Annelies Delabie
Published in: ACS Applied Electronic Materials, Issue 6, 2024, Page(s) 6758-6769, ISSN 2637-6113
Publisher: American Chemical Society
DOI: 10.1021/acsaelm.4c01182

Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

Author(s): Agata Piacentini,Damiano Marian,Daniel S. Schneider,Enrique González Marín,Zhenyu Wang,Martin Otto,Bárbara Canto,Aleksandra Radenovic,Andras Kis,Gianluca Fiori,Max C. Lemme,Daniel Neumaier
Published in: Advanced Electronic Materials, 2022, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.202200123

AFM-Based Hamaker Constant Determination with Blind Tip Reconstruction

Author(s): Benny Ku,Ferdinandus van de Wetering,Jens Bolten,Bart Stel,Mark A. van de Kerkhof,Max C. Lemme
Published in: Advanced Materials Technologies, Issue 2365709X, 2022, ISSN 2365-709X
Publisher: Wiley
DOI: 10.1002/admt.202200411

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

Author(s): Fatima Akhtar, Jaroslaw Dabrowski, Rasuole Lukose, Christian Wenger, Mindaugas Lukosius
Published in: ACS Applied Materials & Interfaces, Issue 15, 2023, Page(s) 36966-36974, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.3c05860

Wafer-scale characterization for two-dimensional material layers

Author(s): A. Moussa, J. Bogdanowicz, B. Groven, P. Morin, M. Beggiato, M. Saib, G. Santoro, Y. Abramovitz, K. Houchens, S. Ben Nissim, N. Meir, J. Hung, A. Urbanowicz, R. Koret, I. Turovets, B. Lee, W.T. Lee, G. F. Lorusso, A.-L. Charley
Published in: Japanese Journal of Applied Physics, Issue 63, 2024, Page(s) 030802, ISSN 1347-4065
Publisher: IOP Publishing
DOI: 10.35848/1347-4065/ad26bc

Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

Author(s): Vladislav Voronenkov, Benjamin Groven, Henry Medina Silva, Pierre Morin, Stefan De Gendt
Published in: physica status solidi (a), Issue 221, 2024, ISSN 1862-6300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202300943

Variability and High Temperature Reliability ofGraphene Field-Effect Transistors with ThinEpitaxial CaF2 Insulators

Author(s): Yury Illarionov, Theresia Knobloch, Burkay Uzlu, Alexander Banshchikov, Illiya Ivanov, Viktor Sverdlov, Mikhail Vexler, Michael Waltl, Zhenxing Wang, Bibhas Manna, Daniel Neumaier, Max C. Lemme, Nikolai Sokolov, Tibor Grasser, Martin Otto, Stefanie Linda Stoll
Published in: NPJ 2D MATERIALS AND APPLICATIONS, 2024, ISSN 2397-7132
Publisher: Nature Portfolio
DOI: 10.21203/rs.3.rs-3936684/v1

Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs

Author(s): Luca Panarella, Stanislav Tyaginov, Ben Kaczer, Quentin Smets, Devin Verreck, Alexander Makarov, Tom Schram, Dennis Lin, César Javier Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Published in: ACS Applied Materials & Interfaces, Issue 16, 2024, Page(s) 62314-62325, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.4c10888

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Author(s): Arne Quellmalz, Xiaojing Wang, Simon Sawallich, Burkay Uzlu, Martin Otto, Stefan Wagner, Zhenxing Wang, Maximilian Prechtl, Oliver Hartwig, Siwei Luo, Georg S. Duesberg, Max C. Lemme, Kristinn B. Gylfason, Niclas Roxhed, Göran Stemme, Frank Niklaus
Published in: Nature Communications, Issue 12/1, 2021, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-021-21136-0

Wafer-Scale Graphene Field-Effect Transistor Biosensor Arrays with Monolithic CMOS Readout

Author(s): Miika Soikkeli, Anton Murros, Arto Rantala, Oihana Txoperena, Olli-Pekka Kilpi, Markku Kainlauri, Kuura Sovanto, Arantxa Maestre, Alba Centeno, Kari Tukkiniemi, David Gomes Martins, Amaia Zurutuza, Sanna Arpiainen, Mika Prunnila
Published in: ACS Applied Electronic Materials, Issue 5, 2023, Page(s) 4925-4932, ISSN 2637-6113
Publisher: American Chemical Society
DOI: 10.1021/acsaelm.3c00706

Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

Author(s): Haonan Tang, Sergej Pasko, Simonas Krotkus, Thorsten Anders, Cornelia Wockel, Jan Mischke, Xiaochen Wang, Ben Conran, Clifford McAleese, Ken Teo, Sreetama Banerjee, Henry Medina Silva, Pierre Morin, Inge Asselberghs, Amir Ghiami, Annika Grundmann, Songyao Tang, Hleb Fiadziushkin, Holger Kalisch, Andrei Vescan, Salim El Kazzi, Alain Marty, Djordje Dosenovic, Hanako Okuno, Lucie Le Van-Jodin, Michae
Published in: Journal of Crystal Growth, Issue 608, 2023, Page(s) 127111, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2023.127111

2D materials for future heterogeneous electronics

Author(s): Max C. Lemme, Deji Akinwande, Cedric Huyghebaert & Christoph Stampfer
Published in: Nature Communications, Issue 20411723, 2022, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-022-29001-4

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

Author(s): Wenwen Fei, Jens Trommer, Max Christian Lemme, Thomas Mikolajick, André Heinzig
Published in: InfoMat, Issue 4, 2024, ISSN 2567-3165
Publisher: Wiley
DOI: 10.1002/inf2.12355

"Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS<mml:math xmlns:mml=""http://www.w3.org/1998/Math/MathML"" altimg=""si12.svg"" display=""inline"" id=""d1e247""><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> monolayers on sapphire substrates"

Author(s): Y. Rybalchenko, A. Minj, H. Medina, R. Villarreal, B. Groven, D. Lin, L.M.C. Pereira, P. Morin, T. Hantschel, V.V. Afanas’ev
Published in: Solid-State Electronics, Issue 209, 2024, Page(s) 108781, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108781

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Author(s): Zaoyang Lin, Sven Dekelver, Daire Cott, Benjamin Groven, Stefanie Sergeant, Thierry Conard, Xiangyu Wu, Pierre Morin, Dennis Lin, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Annelies Delabie
Published in: Journal of Vacuum Science & Technology A, Issue 42, 2024, ISSN 0734-2101
Publisher: American Institute of Physics
DOI: 10.1116/6.0003894

Graphene Thermal Infrared Emitters Integrated into Silicon Photonic Waveguides

Author(s): Nour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin, Po-Han Huang, Stephan Suckow, Stephan Schroeder, Eleonora De Luca, Floria Ottonello Briano, Arne Quellmalz, Georg S. Duesberg, Frank Niklaus, Kristinn B. Gylfason, Max C. Lemme
Published in: ACS Photonics, Issue 11, 2024, Page(s) 2961-2969, ISSN 2330-4022
Publisher: American Chemical Society
DOI: 10.1021/acsphotonics.3c01892

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

Author(s): Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Published in: npj 2D Materials and Applications, Issue 8, 2024, ISSN 2397-7132
Publisher: Nature Portfolio
DOI: 10.1038/s41699-024-00482-9

How to report and benchmark emerging field-effect transistors

Author(s): Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin & Curt A. Richter
Published in: Nature Electronics, Issue 25201131, 2022, ISSN 2520-1131
Publisher: Nature Publishing Group
DOI: 10.1038/s41928-022-00798-8

Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

Author(s): Tom Schram, Surajit Sutar, Iuliana Radu, Inge Asselberghs
Published in: Advanced Materials, Issue 34, 2023, ISSN 0935-9648
Publisher: United Nations Industrial Developement Organization
DOI: 10.1002/adma.202109796

2D TMDC aging: a case study of monolayer WS2 and mitigation strategies

Author(s): P-J Wyndaele, J-F de Marneffe, R Slaets, B Groven, A Franquet, P Brüner, T Grehl, S De Gendt
Published in: Nanotechnology, Issue 35, 2024, Page(s) 475702, ISSN 0957-4484
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ad72fb

Roadmap on energy harvesting materials

Author(s): Vincenzo Pecunia, S Ravi P Silva, Jamie D Phillips, Elisa Artegiani, Alessandro Romeo, Hongjae Shim, Jongsung Park, Jin Hyeok Kim, Jae Sung Yun, Gregory C Welch, Bryon W Larson, Myles Creran, Audrey Laventure, Kezia Sasitharan, Natalie Flores-Diaz, Marina Freitag, Jie Xu, Thomas M Brown, Benxuan Li, Yiwen Wang, Zhe Li, Bo Hou, Behrang H Hamadani, Emmanuel Defay, Veronika Kovacova, Sebastjan Glinse
Published in: Journal of Physics: Materials, Issue 6, 2023, Page(s) 042501, ISSN 2515-7639
Publisher: IOP Publishing
DOI: 10.1088/2515-7639/acc550

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Author(s): Yu. Yu. Illarionov, A. Karl, Q. Smets, B. Kaczer, T. Knobloch, L. Panarella, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser
Published in: npj 2D Materials and Applications, Issue 8, 2024, ISSN 2397-7132
Publisher: Nature Portfolio
DOI: 10.1038/s41699-024-00445-0

Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators

Author(s): Chenghan Wu, Tom Reep, Steven Brems, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Cedric Huyghebaert, Marianna Pantouvaki, Zheng Wang, Dries Van Thourhout
Published in: IEEE Journal of Selected Topics in Quantum Electronics, Issue 30, 2024, Page(s) 1-11, ISSN 1077-260X
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jstqe.2024.3411058

Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

Author(s): P.-J. Wyndaele, J.-F. de Marneffe, S. Sergeant, C. J. L. de la Rosa, S. Brems, A. M. Caro, S. De Gendt
Published in: npj 2D Materials and Applications, Issue 8, 2024, ISSN 2397-7132
Publisher: Nature Portfolio
DOI: 10.1038/s41699-024-00464-x

High yield and process uniformity for 300 mm integrated WS2 FETs

Author(s): T.Schram, Q.Smets, D.Radisic, B.Groven, A.Thiam, W.Li, E.Dupuy,K.Vandersmissen, T.Maurice, I.Asselberghs & I.Radu
Published in: 2021 Symposium on VLSI Technology, 2021
Publisher: IEEE

Overview of scalable transfer approaches to enable epitaxial 2D material integration

Author(s): Steven Brems, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, Francois Chancerel, Clement Merckling, Pieter-Jan Wyndaele, Jean-Francois De Marneffe, Tom Schram, Pawan Kumar, Stefanie Sergeant, Thomas Nuytten, Stefan De Gendt, Henry Medina Silva, Benjamin Groven, Pierre Morin, Gouri Sankar Kar, César Lockhart De la Rosa, Didit Yudistira, Joris Va
Published in: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2024, Page(s) 1-2
Publisher: IEEE
DOI: 10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381

Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Author(s): Quentin Smets; Tom Schram; Devin Verreck; Daire Cott; Benjamin Groven; Zubair Ahmed; Ben Kaczer; Jerome Mitard; Xiangyu Wu; Souvik Kundu; Hans Mertens; Dunja Radisic; Arame Thiam; Waikin Li; Emmanuel Dupuy; Zheng Tao; Kevin Vandersmissen; Thibaut Maurice; Dennis Lin; Pierre Morin; Inge Asselberghs; Iuliana Radu
Published in: 2021 IEEE International Electron Devices Meeting, 2021
Publisher: IEEE
DOI: 10.1109/iedm19574.2021.9720517

Advanced characterization of 2D materials using SEM image processing and machine learning

Author(s): Mohamed Saib, Alain Moussa, Matteo Beggiato, Benjamin Groven, Henry Medina Silva, Pierre Morin, Janusz Bogdanowicz, Gouri Sankar Kar, Anne-Laure Charley
Published in: Metrology, Inspection, and Process Control XXXVIII, 2024, Page(s) 31
Publisher: SPIE
DOI: 10.1117/12.3014378

Wafer scale integration of MX2 based NMOS only ring oscillators on 300 mm wafers

Author(s): Tom Schram; Hikmet. Celiker; Quentin Smets; Inge Asselbergs; G. S. Kar, Kris Myny
Published in: 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2022
Publisher: IEEE
DOI: 10.1109/snw56633.2022.9889048

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer

Author(s): S. Ghosh, Q. Smets, S. Banerjee, T. Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, B. Groven, H. M. Silva, S. Kundu, D. Cott, D. Lin, P. Favia, T. Nuytten, A. Phommahaxay, I. Asselberghs, C. De La Rosa, G. S. Kar, S. Brems
Published in: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, Page(s) 1-2
Publisher: IEEE
DOI: 10.23919/vlsitechnologyandcir57934.2023.10185215

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

Author(s): Yuanyuan Shi; Benjamin Groven; Quentin Smets; Surajit Sutar; Sreetama Banerjee; Henry Medina; Xiangyu Wu; Cedric Huyghebaert; Steven Brems; Dennis Lin; Pierre Morin; Matty Caymax; Inge Asselberghs; Iuliana Radu
Published in: 2021 IEEE International Electron Devices Meeting, 2021
Publisher: IEEE
DOI: 10.1109/iedm19574.2021.9720676

EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration

Author(s): S. Ghosh, A. Kruv, Q. Smets, T. Schram, D. J. Leech, T. Ding, V. Turkani, B. Groven, A. Dangel, G. Probst, T. Uhrmann, M. Wimplinger, I. Asselberghs, C. J. Lockhart de la Rosa, S. Brems, G. S. Kar
Published in: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, Page(s) 1-2
Publisher: IEEE
DOI: 10.1109/vlsitechnologyandcir46783.2024.10631364

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

Author(s): S. Kundu, D. H. van Dorp, T. Schram, Q. Smets, S. Banerjee, B. Groven, D. Cott, S. Decoster, P. Bezard, F. Lazzarino, K. Banerjee, S. Ghosh, J. F. de Marneffe, P. Morin, C. J. L. de La Rosa, I. Asselberghs, G. S. Kar
Published in: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, Page(s) 1-2
Publisher: IEEE
DOI: 10.23919/vlsitechnologyandcir57934.2023.10185413

Intellectual Property Rights

Methods of depositing materials onto 2-dimensional layered materials

Application/Publication number: 20 2118203
Date: 2021-12-15
Applicant(s): OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED

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