Towards optical communication on silicon chips

Informations projet

Opto silicon

N° de convention de subvention: 964191

DOI

10.3030/964191

Projet clôturé

Date de signature de la CE 16 Decembre 2020

Date de début 1 Mai 2021

Date de fin 30 Avril 2025

Financé au titre de

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Coût total

€ 3 753 128,75

Contribution de l’UE

€ 3 753 128,00

Coordonné par

TECHNISCHE UNIVERSITEIT EINDHOVEN
Netherlands

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Documents, reports (19)

Electrically pumped QW laser (NW)

Electrically pumped Hex-Si1-xGex/Si1-yGey (y>x) nanowire quantum well laser (see Fig 6b)

Measurement SOA gain spectrum

Measurement of the gain spectrum of an optically pumped HexSiGe Semiconductor Optical Amplifier SOA

Growth of a low dark current p-n junction

Growth of a HexSiGe pn junction with shows low dark current in a currentvoltage characterization plot

Passivation and contacts

Improved surface passivation TUe contact formation IBM and electrical characterization see description WP1

Low I3 planar defect density

Reduction of the I3 planar defect density in MBE growth. Characterization by high resolution Transmission Electron Microscopy. Growth a larger area Hex-SiGe.If we succeed in reducing the I3 defect density, it will become possible to grow a larger area of Hex-SiGe.

Growth of nominally undoped Hex-SiGe

Growth of nominally undoped HexSiGe n1017cm3 by growing the HexSiGe in a dedicated newly purchased MBE system

Measurement absorption spectrum of Hex-SiGe

TUe and TUM will measure the absorption spectrum and its polarization dependence for different light propagation directions of both strained and unstrained HexSiGe with photocurrent or integrating sphere spectroscopy using our supercontinuum laser source

Hex-SiGe electro-absorption modulator

Proof-of-principle demonstration of a Hex-SiGe electro-absorption modulator

Optically pumped Hex-SiGe QW laser

Optically pumped HexSi1xGexSi1yGey yx quantum well laser using radial quantum wells see Fig 6

Hex-SiGe photodetector

Response and dark current of a Hex-SiGe photodetector

Organization of an international symposium on Hex-SiGe

We will organize an international symposium on hexSiGe in year 2 in order to increase the awareness on this new material for groups outside of our consortium

Growth of an Au-free NW template on Si(111) or Ge(111)

MBE growth of an Aufree nanowire template on Si111 or Ge111 We propose to grow purely wurtzite GaAs nanowires on a patterned Si111 or Ge111 substrate by using a gallium catalyst nanoparticle

Technical/ scientific review meeting documents

Final action check meeting with the external reviewers.Agenda action check meeting:WelcomeIntroduction of all participantsOverview of the project by the coordinator, Jos HaverkortPlanar growth of Hex-SiGe, IBM-Heinz SchmidPhase transformation into Hex-SiGe, Laetitia Vincent-UPSaclay/CNRSPreparation of Hex-SiGe-towards device quality, Erik Bakkers-TU/eOpto-electronic properties of hex-SiGe, Silvana Botti-FSU, Jos Haverkort-TU/eTowards a strained quantum well laser, Jonathan Finley-TUMFeedback by the external evaluatorsClosing

Quantum Confined Stark Effect

Measurement (including simulations) of the Quantum Confined Stark Effect

Electrically pumped planar QW laser

Electrically pumped planar Hex-Si1-xGex/Si1-yGey (y>x) quantum well laser on Si

Carrier dynamics in strained QWs

Report on carrier dynamics in HexSi1xGexSi1yGey yx quantum wells See description WP4

All-optical wavelength conversion

Demonstration (including gain simulations) of all-optical wavelength conversion in a Hex-SiGe nanowire. See Fig. 6a.

Strain dependence

Report on strain dependence of emission wavelength in Hex-Si1-xGex/Si1-yGey quantum wells

Growth of Hex-SiGe quantum wells

Realization of HexSi1xGexSi1yGey yx quantum wells see Fig 6b We will grow HexSi1xGexSi1yGey yx QWs in close collaboration with WP1 and WP2 confirm the 2D nature of the electronic states and establish key structureproperty relationships

Websites, patent fillings, videos etc. (1)

Public web page + logo

Set up project web page Finalize the project logo

Open Research Data Pilot (1)

Data management plan

The data management plan will describe where we will store the relevant data during the project as well as after publication

Publications

Peer reviewed articles (20)

Stimulated emission from hexagonal silicon-germanium nanowires

Auteurs: Marvin A. J. van Tilburg, Riccardo Farina, Victor T. van Lange, Wouter H. J. Peeters, Steffen Meder, Marvin M. Jansen, Marcel A. Verheijen, M. Vettori, Jonathan J. Finley, Erik. P. A. M. Bakkers, Jos. E. M. Haverkort
Publié dans: Communications Physics, Numéro 7, 2024, Page(s) 328, ISSN 2399-3650
Éditeur: Springer Nature publishing
DOI: 10.1038/s42005-024-01824-1

Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowires

Auteurs: Wouter H. J. Peeters, Marco Vettori, Elham M. T. Fadaly, Alexandre Danescu, Chenyang Mao, Marcel A. Verheijen, Erik P. A. M. Bakkers
Publié dans: Physical Review Materials, Numéro 8, 2024, Page(s) L020401-1, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.8.l020401

Growth-Related Formation Mechanism of I3-Type BasalStacking Fault in Epitaxially Grown Hexagonal Ge-2H

Auteurs: Laetitia Vincent,* Elham M. T. Fadaly, Charles Renard, Wouter H. J. Peeters, Marco Vettori, Federico Panciera, Daniel Bouchier, Erik P. A. M Bakkers, and Marcel A. Verheijen
Publié dans: Advanced Materials Interfaces, 2022, ISSN 2196-7350
Éditeur: Wiley VCH
DOI: 10.1002/admi.202102340

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Auteurs: Martin Keller, Abderrezak Belabbes, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti
Publié dans: Physical Review Materials, Numéro 7, 2023, Page(s) 064601-1-15, ISSN 2475-9953
Éditeur: American Physical Society (APS)
DOI: 10.1103/physrevmaterials.7.064601

In situ measurements of thermal and pressure dependent stress in SOG films by phase shifting interferometry

Auteurs: T.M. van den Berg, A. Bosseboeuf, P. Coste, L. Vincent
Publié dans: Micro and Nano Engineering, Numéro 25, 2024, Page(s) 100292, ISSN 2590-0072
Éditeur: Elsevier
DOI: 10.1016/j.mne.2024.100292

Phase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition

Auteurs: Hassan Melhem, Geraldine Hallais, Gaelle Amiri, Gilles Patriarche, Nathaniel Findling, Theo Van den Berg, Hafssa Ameziane, Charles Renard, Vincent Sallet, Laetitia Vincent
Publié dans: Thin Solid Films, Numéro 812, 2025, Page(s) 140609, ISSN 0040-6090
Éditeur: Elsevier Sequoia
DOI: 10.1016/j.tsf.2025.140609

Hexagonal silicon−germanium nanowire branches with tunable composition

Auteurs: A Li, H I T Hauge, M A Verheijen, E P A M Bakkers, R T Tucker, L Vincent and C Renard
Publié dans: Nanotechnology, Numéro 34, 2023, Page(s) 015601 1-8, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ac9317

Dimension Control of Hexagonal SiGe Single Branched Nanowires

Auteurs: Denny Lamon, Hidde A. J. van der Donk, Marcel A. Verheijen, Marvin M. Jansen, Erik P. A. M. Bakkers
Publié dans: Nano Letters, Numéro 25, 2025, Page(s) 5741-5746, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.5c00267

Continuous Wave Mid‐Infrared Lasing from Single InAs Nanowires Grown on Silicon

Auteurs: Steffen Meder, Benjamin Haubmann, Fabio del Giudice, Paul Schmiedeke, David Busse, Jona Zöllner, Jonathan J. Finley, Gregor Koblmüller
Publié dans: Advanced Functional Materials, Numéro 2414046, 2024, Page(s) 1-9, ISSN 1616-301X
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202414046

Giant Optical Oscillator Strengths in Perturbed Hexagonal Germanium

Auteurs: Abderrezak Belabbes, Friedhelm Bechstedt, Silvana Botti
Publié dans: physica status solidi – Rapid Research Letters 16(4), Numéro 31-12-2021, 2021, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100555

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal SixGe1−x alloys

Auteurs: Pedro Borlido, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl
Publié dans: Phys.Rev.Materials, Numéro 7, 2023, Page(s) 014602, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.7.014602

Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers

Auteurs: Wilhelmus J. H. (Willem-Jan) Berghuis, Marvin A. J. van Tilburg, Wouter H. J. Peeters, Victor T. van Lange, Riccardo Farina, Elham M. T. Fadaly, Elsa C. M. Renirie, Roel J. Theeuwes, Marcel. A. Verheijen, Bart Macco, Erik P. A. M. Bakkers, Jos E. M. Haverkort, Wilhelmus M. M. (Erwin) Kessels
Publié dans: ACS Appl. Nano Mater., Numéro 7 issue 2, 2024, Page(s) 2343–2351, ISSN 2574-0970
Éditeur: American Chemical Society
DOI: 10.1021/acsanm.3c05770

Nanosecond Carrier Lifetime of Hexagonal Ge

Auteurs: Victor T. van Lange, Alain Dijkstra, Elham M. T. Fadaly, Wouter H. J. Peeters, Marvin A. J. van Tilburg, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jonathan J. Finley, Jos E. M. Haverkort
Publié dans: ACS Photonics, Numéro 11, 2024, Page(s) 4258-4267, ISSN 2330-4022
Éditeur: American Chemical Society
DOI: 10.1021/acsphotonics.4c01135

Optical Absorption in Hexagonal-Diamond Si and Ge Nanowires: Insights from STEM-EELS Experiments and <i>Ab Initio</i> Theory

Auteurs: Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg, Marc Túnica, Maurizia Palummo, Mathieu Kociak, Laetitia Vincent, Michele Amato
Publié dans: Nano Letters, Numéro 25, 2025, Page(s) 8604-8611, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.5c01406

Carrier cooling in direct bandgap hexagonal silicon-germanium nanowires

Auteurs: M. F. Schouten, M. A. J. van Tilburg, V. T. van Lange, W. H. J. Peeters, R. Farina, M. M. Jansen, M. Vettori, E. P. A. M. Bakkers, J. E. M. Haverkort
Publié dans: Applied Physics Letters, Numéro 125, 2024, Page(s) 112106, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0211035

2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires

Auteurs: Fabrizio Rovaris, Wouter H. J.Peeters, Anna Marzegalli, Frank Glas, Laetitia Vincent, Leo Miglio, Erik P.A.M. Bakkers, Marcel A. Verheijen and Emilio Scalise
Publié dans: ACS Appl. Nano Mater., Numéro 7, 2024, Page(s) 9396–9402, ISSN 2574-0970
Éditeur: American Chemical Society
DOI: 10.1021/acsanm.4c00835

Band lineup at hexagonal SixGe1−x/SiyGe1−y alloy interfaces

Auteurs: Abderrezak Belabbes, Silvana Botti, Friedhelm Bechstedt
Publié dans: Physical Review B, Numéro 106, 2022, Page(s) 085303, ISSN 2469-9950
Éditeur: American Physical Society (APS)
DOI: 10.1103/physrevb.106.085303

Direct bandgap quantum wells in hexagonal Silicon Germanium

Auteurs: Erik Bakkers, Wouter Peeters, Victor Lange, Abderrezak Belabbes, Max van Hemert, Marvin Jansen, Riccardo Farina, Marvin Tilburg, Marcel Verheijen, Silvana Botti, Friedhelm Bechstedt, Jos Haverkort
Publié dans: Nature Communications, Numéro 15, 2024, Page(s) 5252, ISSN 2041-1723
Éditeur: Nature Publishing Group
DOI: 10.21203/rs.3.rs-3875137/v1

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Auteurs: Martin Keller; Abderrezak Belabbes; Jürgen Furthmüller; Friedhelm Bechstedt; Silvana Botti
Publié dans: Phys.Rev Materials, Numéro 7, 2023, Page(s) 064601-1-15, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.7.064601

Growth rate of hexagonal SiGe multi-quantum wells

Auteurs: Wouter H. J. Peeters, Marvin M. Jansen, Mette F. Schouten, Victor T. van Lange, Marco Vettori, Marcel A. Verheijen, Jos E. M. Haverkort, Erik P. A. M. Bakkers
Publié dans: Physical Review B, Numéro 111, 2025, Page(s) L241302, ISSN 2469-9950
Éditeur: American Physical Society (APS)
DOI: 10.1103/d3zf-jft6