Towards optical communication on silicon chips

Informazioni relative al progetto

Opto silicon

ID dell’accordo di sovvenzione: 964191

DOI

10.3030/964191

Progetto chiuso

Data della firma CE 16 Dicembre 2020

Data di avvio 1 Maggio 2021

Data di completamento 30 Aprile 2025

Finanziato da

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Costo totale

€ 3 753 128,75

Contributo UE

€ 3 753 128,00

Coordinato da

TECHNISCHE UNIVERSITEIT EINDHOVEN
Netherlands

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Documents, reports (19)

Electrically pumped QW laser (NW)

Electrically pumped Hex-Si1-xGex/Si1-yGey (y>x) nanowire quantum well laser (see Fig 6b)

Measurement SOA gain spectrum

Measurement of the gain spectrum of an optically pumped HexSiGe Semiconductor Optical Amplifier SOA

Growth of a low dark current p-n junction

Growth of a HexSiGe pn junction with shows low dark current in a currentvoltage characterization plot

Passivation and contacts

Improved surface passivation TUe contact formation IBM and electrical characterization see description WP1

Low I3 planar defect density

Reduction of the I3 planar defect density in MBE growth. Characterization by high resolution Transmission Electron Microscopy. Growth a larger area Hex-SiGe.If we succeed in reducing the I3 defect density, it will become possible to grow a larger area of Hex-SiGe.

Growth of nominally undoped Hex-SiGe

Growth of nominally undoped HexSiGe n1017cm3 by growing the HexSiGe in a dedicated newly purchased MBE system

Measurement absorption spectrum of Hex-SiGe

TUe and TUM will measure the absorption spectrum and its polarization dependence for different light propagation directions of both strained and unstrained HexSiGe with photocurrent or integrating sphere spectroscopy using our supercontinuum laser source

Hex-SiGe electro-absorption modulator

Proof-of-principle demonstration of a Hex-SiGe electro-absorption modulator

Optically pumped Hex-SiGe QW laser

Optically pumped HexSi1xGexSi1yGey yx quantum well laser using radial quantum wells see Fig 6

Hex-SiGe photodetector

Response and dark current of a Hex-SiGe photodetector

Organization of an international symposium on Hex-SiGe

We will organize an international symposium on hexSiGe in year 2 in order to increase the awareness on this new material for groups outside of our consortium

Growth of an Au-free NW template on Si(111) or Ge(111)

MBE growth of an Aufree nanowire template on Si111 or Ge111 We propose to grow purely wurtzite GaAs nanowires on a patterned Si111 or Ge111 substrate by using a gallium catalyst nanoparticle

Technical/ scientific review meeting documents

Final action check meeting with the external reviewers.Agenda action check meeting:WelcomeIntroduction of all participantsOverview of the project by the coordinator, Jos HaverkortPlanar growth of Hex-SiGe, IBM-Heinz SchmidPhase transformation into Hex-SiGe, Laetitia Vincent-UPSaclay/CNRSPreparation of Hex-SiGe-towards device quality, Erik Bakkers-TU/eOpto-electronic properties of hex-SiGe, Silvana Botti-FSU, Jos Haverkort-TU/eTowards a strained quantum well laser, Jonathan Finley-TUMFeedback by the external evaluatorsClosing

Quantum Confined Stark Effect

Measurement (including simulations) of the Quantum Confined Stark Effect

Electrically pumped planar QW laser

Electrically pumped planar Hex-Si1-xGex/Si1-yGey (y>x) quantum well laser on Si

Carrier dynamics in strained QWs

Report on carrier dynamics in HexSi1xGexSi1yGey yx quantum wells See description WP4

All-optical wavelength conversion

Demonstration (including gain simulations) of all-optical wavelength conversion in a Hex-SiGe nanowire. See Fig. 6a.

Strain dependence

Report on strain dependence of emission wavelength in Hex-Si1-xGex/Si1-yGey quantum wells

Growth of Hex-SiGe quantum wells

Realization of HexSi1xGexSi1yGey yx quantum wells see Fig 6b We will grow HexSi1xGexSi1yGey yx QWs in close collaboration with WP1 and WP2 confirm the 2D nature of the electronic states and establish key structureproperty relationships

Websites, patent fillings, videos etc. (1)

Public web page + logo

Set up project web page Finalize the project logo

Open Research Data Pilot (1)

Data management plan

The data management plan will describe where we will store the relevant data during the project as well as after publication

Pubblicazioni

Peer reviewed articles (20)

Stimulated emission from hexagonal silicon-germanium nanowires

Autori: Marvin A. J. van Tilburg, Riccardo Farina, Victor T. van Lange, Wouter H. J. Peeters, Steffen Meder, Marvin M. Jansen, Marcel A. Verheijen, M. Vettori, Jonathan J. Finley, Erik. P. A. M. Bakkers, Jos. E. M. Haverkort
Pubblicato in: Communications Physics, Numero 7, 2024, Pagina/e 328, ISSN 2399-3650
Editore: Springer Nature publishing
DOI: 10.1038/s42005-024-01824-1

Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowires

Autori: Wouter H. J. Peeters, Marco Vettori, Elham M. T. Fadaly, Alexandre Danescu, Chenyang Mao, Marcel A. Verheijen, Erik P. A. M. Bakkers
Pubblicato in: Physical Review Materials, Numero 8, 2024, Pagina/e L020401-1, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.8.l020401

Growth-Related Formation Mechanism of I3-Type BasalStacking Fault in Epitaxially Grown Hexagonal Ge-2H

Autori: Laetitia Vincent,* Elham M. T. Fadaly, Charles Renard, Wouter H. J. Peeters, Marco Vettori, Federico Panciera, Daniel Bouchier, Erik P. A. M Bakkers, and Marcel A. Verheijen
Pubblicato in: Advanced Materials Interfaces, 2022, ISSN 2196-7350
Editore: Wiley VCH
DOI: 10.1002/admi.202102340

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Autori: Martin Keller, Abderrezak Belabbes, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti
Pubblicato in: Physical Review Materials, Numero 7, 2023, Pagina/e 064601-1-15, ISSN 2475-9953
Editore: American Physical Society (APS)
DOI: 10.1103/physrevmaterials.7.064601

In situ measurements of thermal and pressure dependent stress in SOG films by phase shifting interferometry

Autori: T.M. van den Berg, A. Bosseboeuf, P. Coste, L. Vincent
Pubblicato in: Micro and Nano Engineering, Numero 25, 2024, Pagina/e 100292, ISSN 2590-0072
Editore: Elsevier
DOI: 10.1016/j.mne.2024.100292

Phase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition

Autori: Hassan Melhem, Geraldine Hallais, Gaelle Amiri, Gilles Patriarche, Nathaniel Findling, Theo Van den Berg, Hafssa Ameziane, Charles Renard, Vincent Sallet, Laetitia Vincent
Pubblicato in: Thin Solid Films, Numero 812, 2025, Pagina/e 140609, ISSN 0040-6090
Editore: Elsevier Sequoia
DOI: 10.1016/j.tsf.2025.140609

Hexagonal silicon−germanium nanowire branches with tunable composition

Autori: A Li, H I T Hauge, M A Verheijen, E P A M Bakkers, R T Tucker, L Vincent and C Renard
Pubblicato in: Nanotechnology, Numero 34, 2023, Pagina/e 015601 1-8, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ac9317

Dimension Control of Hexagonal SiGe Single Branched Nanowires

Autori: Denny Lamon, Hidde A. J. van der Donk, Marcel A. Verheijen, Marvin M. Jansen, Erik P. A. M. Bakkers
Pubblicato in: Nano Letters, Numero 25, 2025, Pagina/e 5741-5746, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.5c00267

Continuous Wave Mid‐Infrared Lasing from Single InAs Nanowires Grown on Silicon

Autori: Steffen Meder, Benjamin Haubmann, Fabio del Giudice, Paul Schmiedeke, David Busse, Jona Zöllner, Jonathan J. Finley, Gregor Koblmüller
Pubblicato in: Advanced Functional Materials, Numero 2414046, 2024, Pagina/e 1-9, ISSN 1616-301X
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202414046

Giant Optical Oscillator Strengths in Perturbed Hexagonal Germanium

Autori: Abderrezak Belabbes, Friedhelm Bechstedt, Silvana Botti
Pubblicato in: physica status solidi – Rapid Research Letters 16(4), Numero 31-12-2021, 2021, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100555

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal SixGe1−x alloys

Autori: Pedro Borlido, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl
Pubblicato in: Phys.Rev.Materials, Numero 7, 2023, Pagina/e 014602, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.7.014602

Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers

Autori: Wilhelmus J. H. (Willem-Jan) Berghuis, Marvin A. J. van Tilburg, Wouter H. J. Peeters, Victor T. van Lange, Riccardo Farina, Elham M. T. Fadaly, Elsa C. M. Renirie, Roel J. Theeuwes, Marcel. A. Verheijen, Bart Macco, Erik P. A. M. Bakkers, Jos E. M. Haverkort, Wilhelmus M. M. (Erwin) Kessels
Pubblicato in: ACS Appl. Nano Mater., Numero 7 issue 2, 2024, Pagina/e 2343–2351, ISSN 2574-0970
Editore: American Chemical Society
DOI: 10.1021/acsanm.3c05770

Nanosecond Carrier Lifetime of Hexagonal Ge

Autori: Victor T. van Lange, Alain Dijkstra, Elham M. T. Fadaly, Wouter H. J. Peeters, Marvin A. J. van Tilburg, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jonathan J. Finley, Jos E. M. Haverkort
Pubblicato in: ACS Photonics, Numero 11, 2024, Pagina/e 4258-4267, ISSN 2330-4022
Editore: American Chemical Society
DOI: 10.1021/acsphotonics.4c01135

Optical Absorption in Hexagonal-Diamond Si and Ge Nanowires: Insights from STEM-EELS Experiments and <i>Ab Initio</i> Theory

Autori: Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg, Marc Túnica, Maurizia Palummo, Mathieu Kociak, Laetitia Vincent, Michele Amato
Pubblicato in: Nano Letters, Numero 25, 2025, Pagina/e 8604-8611, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.5c01406

Carrier cooling in direct bandgap hexagonal silicon-germanium nanowires

Autori: M. F. Schouten, M. A. J. van Tilburg, V. T. van Lange, W. H. J. Peeters, R. Farina, M. M. Jansen, M. Vettori, E. P. A. M. Bakkers, J. E. M. Haverkort
Pubblicato in: Applied Physics Letters, Numero 125, 2024, Pagina/e 112106, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0211035

2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires

Autori: Fabrizio Rovaris, Wouter H. J.Peeters, Anna Marzegalli, Frank Glas, Laetitia Vincent, Leo Miglio, Erik P.A.M. Bakkers, Marcel A. Verheijen and Emilio Scalise
Pubblicato in: ACS Appl. Nano Mater., Numero 7, 2024, Pagina/e 9396–9402, ISSN 2574-0970
Editore: American Chemical Society
DOI: 10.1021/acsanm.4c00835

Band lineup at hexagonal SixGe1−x/SiyGe1−y alloy interfaces

Autori: Abderrezak Belabbes, Silvana Botti, Friedhelm Bechstedt
Pubblicato in: Physical Review B, Numero 106, 2022, Pagina/e 085303, ISSN 2469-9950
Editore: American Physical Society (APS)
DOI: 10.1103/physrevb.106.085303

Direct bandgap quantum wells in hexagonal Silicon Germanium

Autori: Erik Bakkers, Wouter Peeters, Victor Lange, Abderrezak Belabbes, Max van Hemert, Marvin Jansen, Riccardo Farina, Marvin Tilburg, Marcel Verheijen, Silvana Botti, Friedhelm Bechstedt, Jos Haverkort
Pubblicato in: Nature Communications, Numero 15, 2024, Pagina/e 5252, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.21203/rs.3.rs-3875137/v1

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Autori: Martin Keller; Abderrezak Belabbes; Jürgen Furthmüller; Friedhelm Bechstedt; Silvana Botti
Pubblicato in: Phys.Rev Materials, Numero 7, 2023, Pagina/e 064601-1-15, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.7.064601

Growth rate of hexagonal SiGe multi-quantum wells

Autori: Wouter H. J. Peeters, Marvin M. Jansen, Mette F. Schouten, Victor T. van Lange, Marco Vettori, Marcel A. Verheijen, Jos E. M. Haverkort, Erik P. A. M. Bakkers
Pubblicato in: Physical Review B, Numero 111, 2025, Pagina/e L241302, ISSN 2469-9950
Editore: American Physical Society (APS)
DOI: 10.1103/d3zf-jft6