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Towards optical communication on silicon chips

Project description

Hexagonal silicon–germanium structure could help squeeze light out of silicon chips

For more than half a century, silicon has been the raw material of choice in microelectronics. Emitting light from this material has been the holy grail in the microelectronics industry, as chips would become faster than ever. However, silicon, germanium and silicon–germanium alloys are all indirect band gap semiconductors that cannot emit light efficiently. Researchers’ efforts are now devoted to combining silicon and germanium in a hexagonal structure that can emit light, as it seems to have a direct band gap. The goal of the EU-funded Opto silicon project is to integrate light-emitting devices based on hexagonal silicon–germanium with existing silicon electronics and passive silicon photonics circuitry. The new technology could significantly improve computing performance while also reducing silicon wafer costs.

Objective

Our vision is to integrate light-emitting devices, based on hexagonal silicon-germanium (Hex-SiGe), with existing Si electronics and passive Si-photonics circuitry. This establishes a silicon-compatible technology platform, with full opto-electronic functionality.

Silicon dominates the electronics industry for more than half a century. However, silicon, germanium and SiGe-alloys are all indirect band gap semiconductors. Their inability to efficiently emit light has adversely shaped the semiconductor industry we know today. Accordingly, achieving efficient light emission from SiGe has been a holy grail in silicon technology for decades. Hexagonal crystal phase SiGe (Hex-SiGe) recently emerged as a new direct bandgap semiconductor with excellent light emission capabilities. Hex-SiGe will provide additional functionality like light generation (light emitting diode, laser), light amplification (semiconductor optical amplifier) and efficient light detection to silicon technology.

This project will focus on:
• The growth of device quality Hex-SiGe on silicon-on-insulator (SOI).
• Demonstration of opto-electronic functionality in Hex-SiGe, including a quantum well laser.
This new technology promises strongly improved performance in computing and sensing, while simultaneously reducing cost by mass production in existing silicon foundries.

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RIA - Research and Innovation action

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Call for proposal

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(opens in new window) H2020-FETOPEN-2018-2020

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Coordinator

TECHNISCHE UNIVERSITEIT EINDHOVEN
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 1 268 140,00
Address
GROENE LOPER 3
5612 AE Eindhoven
Netherlands

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Region
Zuid-Nederland Noord-Brabant Zuidoost-Noord-Brabant
Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 1 268 140,00

Participants (5)

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