Optical thermal processing for silicon solar cell manufacturing

Informazioni relative al progetto

ID dell’accordo di sovvenzione: JOUR0096

Progetto chiuso

Data di avvio 1 Ottobre 1990

Data di completamento 31 Marzo 1993

Finanziato da

• Specific research and technological development programme (EEC) in the field of energy - non-nuclear energies and rational use of energy - (JOULE), 1989-1992

Costo totale

Nessun dato

Contributo UE

Nessun dato

Coordinato da

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France

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Risultati sfruttabili

Solar cell manufacture: optical thermal processing

Research has been carried out with respect to the preparation and characterization of shallow P/N junctions realized by coupling nonanalyzed ion implantation of the dopant (or any kind of deposition technique) with a special transient optical heating technique which can operate in the liquid and solid phase regime. Research was carried out in the following areas: doping procedures (doped silicon presses); transient annealing (rapid thermal processing in lamp furnaces); characterization of the junction; crossing comparison of the techniques; solar cell manufacturing (15% efficiency for a single P/N junction). Perspectives of a dry processing are being investigated in a new project. The best result of this research was the realization of 15% conversion efficiency P/N junction silicon solar cells by employing a doping using doped silicon glasses to rapid thermal diffusion in a lamp furnace.