Cel - To establish sequential processes including rapid thermal clean (RTC), DRAM or EEPROM stack (Rapid Thermal Oxidation/Nitration: RTO/N) and rapid CVD of doped poly or nitride (RTCVD).- To examine technical processes, equipment economics (CoO) and reliability for the hot processing cluster-tool.- To compare technological performance and economics of the cluster tool with standard batch processing.The performance of a four port hot cluster delivered by ASMI (platform and CVD modules) and by AST (RTP modules) will be assessed at SIEMENS in Munich. The final goal is to demonstrate technological superiority of clustered single wafer processing of very thin films over batch processes. This should lead to competitive cost of ownership figures even with lower throughput for single wafer processing. Dziedzina nauki social scienceseconomics and businesseconomicsnatural scienceschemical scienceselectrochemistryelectrolysisengineering and technologymaterials engineeringcoating and films Program(-y) FP4-ESPRIT 4 - Specific research and technological development programme in the field of information technologies, 1994-1998 Temat(-y) 2.9 - Building blocks, methods & tools for semiconductor app&techs Zaproszenie do składania wniosków Data not available System finansowania ACM - Preparatory, accompanying and support measures Koordynator Siemens Ag, Semiconductor Group Wkład UE Brak danych Adres Balanstrasse 73 81541 Muenchen Niemcy Zobacz na mapie Koszt całkowity Brak danych