Quantum Large Scale Integretion in Silicon

Informacje na temat projektu

QLSI

Identyfikator umowy o grant: 951852

DOI

10.3030/951852

Projekt został zamknięty

Data podpisania przez KE 1 Września 2020

Data rozpoczęcia 1 Września 2020

Data zakończenia 28 Lutego 2025

Finansowanie w ramach

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Koszt całkowity

€ 14 916 158,75

Wkład UE

€ 14 666 144,75

Koordynowany przez

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

CORDIS oferuje możliwość skorzystania z odnośników do publicznie dostępnych publikacji i rezultatów projektów realizowanych w ramach programów ramowych HORYZONT.

Odnośniki do rezultatów i publikacji związanych z poszczególnymi projektami 7PR, a także odnośniki do niektórych konkretnych kategorii wyników, takich jak zbiory danych i oprogramowanie, są dynamicznie pobierane z systemu OpenAIRE .

Rezultaty

Documents, reports (4)

D6.1.1.a Scientific publications, Workshop, Training - Annual Report

Scientific publications, Workshop, Training - Annual Report

D6.1.1.c Scientific publications, Workshop, Training - Annual Report

Scientific publications, Workshop, Training - Annual Report

D6.1.1.b Scientific publications, Workshop, Training - Annual Report

Scientific publications, Workshop, Training - Annual Report

D4.1.3 Report on 99.9% charge visibility for 10µs integration time using gate-based reflectometry

Report on 99.9% charge visibility for 10µs integration time using gate-based reflectometry

Demonstrators, pilots, prototypes (2)

D5.1.5 Open access online 8-qubit quantum computer prototype

Open access online 8-qubit quantum computer prototype

D5.1.3 Upgraded demonstrator set-up for control of 4-qubit quantum device

Upgraded demonstrator set-up for control of 4-qubit quantum device

Websites, patent fillings, videos etc. (1)

D1.1.3 Website, kick-off meeting, management plan - including risk

Website, kick-off meeting, management plan - including risk

Publikacje

Peer reviewed articles (36)

Compilation and scaling strategies for a silicon quantum processor with sparse two-dimensional connectivity

Autorzy: O. Crawford; J. R. Cruise; N. Mertig; M. F. Gonzalez-Zalba
Opublikowane w: NPJ Quantum Information, Numer 9:13, 2023, ISSN 2056-6387
Wydawca: Nature Publishing Group
DOI: 10.1038/s41534-023-00679-8

Variability of electron and hole spin qubits due to interface roughness and charge traps

Autorzy: Martinez, Biel; Niquet, Yann-Michel
Opublikowane w: Physical Review Applied, Numer 17/2, 2022, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/physrevapplied.17.024022

Probing quantum devices with radio-frequency reflectometry

Autorzy: Florian Vigneau; Federico Fedele; Anasua Chatterjee; David Reilly; Ferdinand Kuemmeth; M. Fernando Gonzalez-Zalba; Edward Laird; Natalia Ares
Opublikowane w: Applied Physics Review, Numer 10, 2023, ISSN 1931-9401
Wydawca: AIP Publishing LLC
DOI: 10.1063/5.0088229

Crosstalk analysis for single-qubit and two-qubit gates in spin qubit arrays

Autorzy: Irina Heinz; Guido Burkard
Opublikowane w: Physical Review B, Numer 104, 4, 2021, ISSN 2469-9969
Wydawca: American Physical Society
DOI: 10.1103/physrevb.104.045420

Reflectometry of charge transitions in a silicon quadruple dot

Autorzy: Bohuslavskyi, Heorhii; Ansaloni, Fabio; Chatterjee, Anasua; Fedele, Federico; Rasmussen, Torbj��rn; Brovang, Bertram; Li, Jing; Hutin, Louis; Venitucci, Benjamin; Bertrand, Benoit; Vinet, Maud; Niquet, Yann-Michel; Kuemmeth, Ferdinand
Opublikowane w: New Journal of Physics, 2023, ISSN 1367-2630
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1367-2630/acc126

Quantum Dot-Based Frequency Multiplier

Autorzy: G.A. Oakes; L. Peri; L. Cochrane; F. Martins; L. Hutin; B. Bertrand; M. Vinet; A. Gomez Saiz; C.J.B. Ford; C.G. Smith; M.F. Gonzalez-Zalba
Opublikowane w: PRX Quantum, Numer 4, 2023, ISSN 2691-3399
Wydawca: American Physical Society
DOI: 10.1103/prxquantum.4.020346

Limitations in Quantum Computing from Resource Constraints

Autorzy: Marco Fellous-Asiani; Jing Hao Chai; Robert S. Whitney; Alexia Auffèves; Hui Khoon Ng; Hui Khoon Ng; Hui Khoon Ng
Opublikowane w: PRX Quantum, Numer 2, 2021, ISSN 2691-3399
Wydawca: APS Physics
DOI: 10.1103/prxquantum.2.040335

Electrical Control of Uniformity in Quantum Dot Devices

Autorzy: Marcel Meyer; Corentin Déprez; Timo R. van Abswoude; Ilja N. Meijer; Dingshan Liu; Chien-An Wang; Saurabh Karwal; Stefan Oosterhout; Francesco Borsoi; Amir Sammak; Nico W. Hendrickx; Giordano Scappucci; Menno Veldhorst
Opublikowane w: Nano Letter, Numer 23, 2023, Strona(/y) 2522-2529, ISSN 1530-6984
Wydawca: American Chemical Society
DOI: 10.1021/acs.nanolett.2c04446

Reducing charge noise in quantum dots by using thin silicon quantum wells

Autorzy: Brian Paquelet Wuetz; Davide Degli Esposti; Anne-Marije J. Zwerver; Sergey V. Amitonov; Marc Botifoll; Jordi Arbiol; Lieven M. K. Vandersypen; Maximilian Russ; Giordano Scappucci
Opublikowane w: Nature Communications, Numer 14:1385, 2023, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-023-36951-w

Autonomous Estimation of High-Dimensional Coulomb Diamonds from Sparse Measurements

Autorzy: Anasua Chatterjee; Fabio Ansaloni; Torbjørn Rasmussen; Bertram Brovang; Federico Fedele; Heorhii Bohuslavskyi; Oswin Krause; Ferdinand Kuemmeth
Opublikowane w: Physical Review Applied, Numer 18:064040, 2022, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/physrevapplied.18.064040

Semiconductor spin qubits

Autorzy: Guido Burkard; Thaddeus D. Ladd; Andrew Pan; John M. Nichol; Jason R. Petta
Opublikowane w: REVIEWS OF MODERN PHYSICS, Numer 95, 2023, ISSN 1539-0756
Wydawca: American Physical Society
DOI: 10.1103/revmodphys.95.025003

Enhanced Spin Coherence while Displacing Electron in a Two-Dimensional Array of Quantum Dots

Autorzy: Pierre-André Mortemousque; Baptiste Jadot; Emmanuel Chanrion; Vivien Thiney; Christopher Bäuerle; Arne Ludwig; Andreas D. Wieck; Matias Urdampilleta; Tristan Meunier
Opublikowane w: PRX Quantum, Numer 2/3, 2021, ISSN 2691-3399
Wydawca: APS Physics
DOI: 10.1103/prxquantum.2.030331

Silicon spin qubits from laboratory to industry

Autorzy: Marco De Michielis, Elena Ferraro, Enrico Prati, Louis Hutin, Benoit Bertrand, Edoardo Charbon, David J Ibberson, Miguel Fernando Gonzalez-Zalba
Opublikowane w: Journal of Physics D: Applied Physics, Numer 56, 2023, Strona(/y) 363001, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6463/acd8c7

Quantum Technologies Need a Quantum Energy Initiative

Autorzy: Auffèves, A.
Opublikowane w: PRX Quantum, Numer 3, 2022, ISSN 2691-3399
Wydawca: American Physical Society
DOI: 10.1103/prxquantum.3.020101

Nonlinear Response and Crosstalk of Electrically Driven Silicon Spin Qubits

Autorzy: Brennan Undseth; Xiao Xue; Mohammad Mehmandoost; Maximilian Rimbach-Russ; Pieter T. Eendebak; Nodar Samkharadze; Amir Sammak; Viatcheslav V. Dobrovitski; Giordano Scappucci; Lieven M.K. Vandersypen
Opublikowane w: Physical Review Applied, 19(4), Numer 19, 2023, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/physrevapplied.19.044078

Geometry of the dephasing sweet spots of spin-orbit qubits

Autorzy: Lorenzo Mauro, Esteban A. Rodríguez-Mena, Marion Bassi, Vivien Schmitt, Yann-Michel Niquet
Opublikowane w: Physical Review B, Numer 109, 2024, ISSN 2469-9950
Wydawca: American Physical Society (APS)
DOI: 10.1103/physrevb.109.155406

Roadmap on quantum nanotechnologies

Autorzy: Arne Laucht; Frank Hohls; Niels Ubbelohde; M. Fernando Gonzalez-Zalba; David J. Reilly; Søren Stobbe; Tim Schröder; Tim Schröder; Pasquale Scarlino; Jonne V. Koski; Andrew S. Dzurak; Chih Hwan Yang; Jun Yoneda; Ferdinand Kuemmeth; Hendrik Bluhm; Jarryd J. Pla; Charles D. Hill; Joe Salfi; Akira Oiwa; Juha T. Muhonen; Ewold Verhagen; Matthew LaHaye; Matthew LaHaye; Hyun Ho Kim; Hyun Ho Kim; Adam
Opublikowane w: Laucht , A , Hohls , F , Ubbelohde , N , Gonzalez-Zalba , M F , Reilly , D J , Stobbe , S , Schroeder , T , Scarlino , P , Koski , J , Dzurak , A , Yang , C-H , Yoneda , J , Kuemmeth , F , Bluhm , H , Pla , J , Hill , C , Salfi , J , Oiwa , A , Muhonen , J T , Verhagen , E , LaHaye , M D , Kim , H H , Tsen , A W , Culcer , D , Geresdi , A , Mol , J A , Mohan , V , Jain , P K & Baugh , J 2021 , ' R, Numer 32/16, 2021, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/abb333

Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices

Autorzy: C. Corley-Wiciak, M.H. Zoellner, I. Zaitsev, K. Anand, E. Zatterin, Y. Yamamoto, A.A. Corley-Wiciak, F. Reichmann, W. Langheinrich, L.R. Schreiber, C.L. Manganelli, M. Virgilio, C. Richter, G. Capellini
Opublikowane w: Physical Review Applied, Numer 20, 2023, ISSN 2331-7019
Wydawca: American Physical Society (APS)
DOI: 10.1103/physrevapplied.20.024056

Estimation of Convex Polytopes for Automatic Discovery of Charge State Transitions in Quantum Dot Arrays

Autorzy: Oswin Krause; Bertram Brovang; Torbjørn Rasmussen; Anasua Chatterjee; Ferdinand Kuemmeth
Opublikowane w: Electronics, Numer 4, 2022, ISSN 2079-9292
Wydawca: MDPI
DOI: 10.3390/electronics11152327

Parametric Amplifiers Based on Quantum Dots

Autorzy: Laurence Cochrane; Theodor Lundberg; David J. Ibberson; Lisa A. Ibberson; Louis Hutin; Benoit Bertrand; Nadia Stelmashenko; Jason W. A. Robinson; Maud Vinet; Ashwin A. Seshia; M. Fernando Gonzalez-Zalba
Opublikowane w: Physical Review Letter, Numer 128, 2022, ISSN 1079-7114
Wydawca: American Physical Society
DOI: 10.1103/physrevlett.128.197701

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

Autorzy: G. A. Oakes; V. N. Ciriano-Tejel; D. F. Wise; M. A. Fogarty; T. Lundberg; C. Lainé; S. Schaal; F. Martins; D. J. Ibberson; L. Hutin; B. Bertrand; N. Stelmashenko; J. W. A. Robinson; L. Ibberson; A. Hashim; I. Siddiqi; A. Lee; M. Vinet; C. G. Smith; J. J. L. Morton; M. F. Gonzalez-Zalba
Opublikowane w: Physical Review X, Numer 13:011023, 2023, ISSN 2160-3308
Wydawca: American Physical Society
DOI: 10.48550/arxiv.2203.06608

A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

Autorzy: Andrea Ruffino; Tsung-Yeh Yang; John Michniewicz; Yatao Peng; Edoardo Charbon; Miguel Fernando Gonzalez-Zalba
Opublikowane w: Nature Electronics, Numer 5, 2022, Strona(/y) 53-59, ISSN 2520-1131
Wydawca: Springer Nature
DOI: 10.1038/s41928-021-00687-6

Semiconductor qubits in practice

Autorzy: Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi, Andrea Morello, Nathalie P. de Leon, Ferdinand Kuemmeth
Opublikowane w: Nature Reviews Physics, Numer 3/3, 2021, Strona(/y) 157-177, ISSN 2522-5820
Wydawca: Nature
DOI: 10.1038/s42254-021-00283-9

RF simulation platform of qubit control using FDSOI technology for quantum computing

Autorzy: H. Jacquinot, R. Maurand, G.T. Fernández-Bada, B. Bertrand, M. Cassé, Y.M. Niquet, S. de Franceschi, T. Meunier, M. Vinet
Opublikowane w: Solid-State Electronics, Numer Volume 199, 2023, ISSN 0038-1101
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108488

Single-electron operations in a foundry-fabricated array of quantum dots

Autorzy: Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi, Benoit Bertrand, Louis Hutin, Maud Vinet, Ferdinand Kuemmeth
Opublikowane w: Nature Communications, Numer 11/1, 2020, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-020-20280-3

Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics

Autorzy: L. Peri, G. A. Oakes, L. Cochrane, C. J. B. Ford, M. F. Gonzalez-Zalba
Opublikowane w: Quantum, Numer 8, 2024, Strona(/y) 1294, ISSN 2521-327X
Wydawca: Verein zur Forderung des Open Access Publizierens in den Quantenwissenschaften
DOI: 10.22331/q-2024-03-21-1294

Scaling silicon-based quantum computing using CMOS technology

Autorzy: M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet & A. S. Dzurak
Opublikowane w: Nature Electronics, Numer 4, 2021, Strona(/y) 872-884, ISSN 2520-1131
Wydawca: Springer Nature
DOI: 10.1038/s41928-021-00681-y

Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

Autorzy: Bernhard Klemt, Victor Elhomsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron Spence, Matthieu C. Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta
Opublikowane w: npj Quantum Information, Numer 9, 2023, ISSN 2056-6387
Wydawca: Springer Science and Business Media LLC
DOI: 10.1038/s41534-023-00776-8

High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates

Autorzy: Irina Heinz; Guido Burkard
Opublikowane w: Physical Review B, Numer 105, 2022, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/physrevb.105.l121402

Non-symmetric Pauli spin blockade in a silicon double quantum dot

Autorzy: Theodor Lundberg, David J. Ibberson, Jing Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Opublikowane w: npj Quantum Information, Numer 10, 2024, ISSN 2056-6387
Wydawca: Springer Science and Business Media LLC
DOI: 10.1038/s41534-024-00820-1

Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device

Autorzy: Cedric Corley-Wiciak; Carsten Richter; Marvin H. Zoellner; Ignatii Zaitsev; Costanza L. Manganelli; Edoardo Zatterin; Tobias U. Schülli; Agnieszka A. Corley-Wiciak; Jens Katzer; Felix Reichmann; Wolfgang M. Klesse; Nico W. Hendrickx; Amir Sammak; Menno Veldhorst; Giordano Scappucci; Michele Virgilio; Giovanni Capellini
Opublikowane w: ACS Applied Materials & Interfaces, Numer 15, 2023, Strona(/y) 3119-3130, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.2c17395

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

Autorzy: Biel Martinez, Silvano de Franceschi, Yann-Michel Niquet
Opublikowane w: Physical Review Applied, Numer 22, 2024, ISSN 2331-7019
Wydawca: American Physical Society (APS)
DOI: 10.1103/physrevapplied.22.024030

Low dephasing and robust micromagnet designs for silicon spin qubits

Autorzy: N. I. Dumoulin Stuyck; Fahd A. Mohiyaddin; R. Li; Marc Heyns; Bogdan Govoreanu; Iuliana Radu
Opublikowane w: Applied Physics Letters, Numer 119, 2021, ISSN 1077-3118
Wydawca: AIP
DOI: 10.1063/5.0059939

Crosstalk analysis for simultaneously driven two-qubit gates in spin qubit arrays

Autorzy: Irina Heinz; Guido Burkard
Opublikowane w: Physical Review B, Numer 105, 2022, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/physrevb.105.085414

Cavity-mediated iSWAP oscillations between distant spins

Autorzy: Jurgen Dijkema, Xiao Xue, Patrick Harvey-Collard, Maximilian Rimbach-Russ, Sander L. de Snoo, Guoji Zheng, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen
Opublikowane w: Nature Physics, Numer 21, 2025, Strona(/y) 168-174, ISSN 1745-2473
Wydawca: Nature Publishing Group
DOI: 10.1038/s41567-024-02694-8

Strong coupling between a photon and a hole spin in silicon

Autorzy: Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Étienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Opublikowane w: Nature Nanotechnology, Numer 18, 2023, Strona(/y) 741-746, ISSN 1748-3387
Wydawca: Nature Publishing Group
DOI: 10.1038/s41565-023-01332-3

Non-peer reviewed articles (1)

Analysis and mitigation of residual exchange coupling in linear spin-qubit arrays

Autorzy: Irina Heinz, Adam R. Mills, Jason R. Petta, Guido Burkard
Opublikowane w: Physical Review Research, Numer 6, 2024, Strona(/y) https://arxiv.org/abs/2308.11308, ISSN 2643-1564
Wydawca: American Physical Society (APS)
DOI: 10.1103/physrevresearch.6.013153

Conference proceedings (5)

Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device

Autorzy: Varvara Brackmann, Malte Neul, Michael Friedrich, Wolfram Langheinrich, Maik Simon, Pascal Muster, Sebastian Pregl, Arne Demmler, Norbert Hanisch, Maximilian Lederer, Katrin Zimmermann, Jan Klos, Felix Reichmann, Yuji Yamamoto, Marcus Wislicenus, Claus Dahl, Lars R. Schreiber, Hendrik Bluhm, Benjamin Lilienthal-Uhlig
Opublikowane w: 38th European Mask and Lithography Conference (EMLC 2023), Numer Proceedings Volume 12802, 2023, Strona(/y) 128020E, ISBN 9781510668607
Wydawca: SPIE
DOI: 10.1117/12.2675943

A new FDSOI spin qubit platform with 40nm effective control pitch

Autorzy: T. Bédécarrats, B. Cardoso Paz, B. Martinez Diaz, H. Niebojewski, B. Bertrand, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez, J.-M. Hartmann, Y. Morand, A. Magalhaes-Lucas, E. Nowak, E. Catapano, M. Cassé, M. Urdampilleta, Y.-M. Niquet, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet
Opublikowane w: 2021 IEEE International Electron Devices Meeting (IEDM), 2021, ISBN 978-1-6654-2572-8
Wydawca: IEEE
DOI: 10.1109/iedm19574.2021.9720497

Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

Autorzy: Kao, KH; Godfrin, C; Elsayed, A ; Li, R; Simoen, E; Grill, A; Kubicek, S; Radu, IP; Govoreanu, B
Opublikowane w: IEEE Electron Device Letters, Numer 15580563, 2022, Strona(/y) 674-677, ISSN 1558-0563
Wydawca: IEEE
DOI: 10.1109/led.2022.3162368

Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture

Autorzy: F.A. Mohiyaddin, R. Li, S. Brebels, G. Simion, N. I. Dumoulin Stuyck, C. Godfrin, M. Shehata, A. Elsayed, B. Gys, S. Kubicek, J. Jussot, Y. Canvel, S. Massar, P. Weckx, P. Matagne, M. Mongillo, B. Govoreanu & I. P. Radu
Opublikowane w: 2021 IEEE International Electron Devices Meeting (IEDM), 2021, ISBN 978-1-6654-2572-8
Wydawca: IEEE
DOI: 10.1109/iedm19574.2021.9720606

Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology

Autorzy: B. Cardoso Paz, V. El-Homsy, D. J. Niegemann, B. Klemt, E. Chanrion, V. Thiney, B. Jadot, P. A. Mortemousque, B. Bertrand, T. Bédécarrats, H. Niebojewski, F. Perruchot, S. De Franceschi, M. Vinet, M. Urdampilleta and T. Meunier
Opublikowane w: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), 2022, ISBN 9781665484954
Wydawca: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/esscirc55480.2022.9911381